公开(公告)号：US11538756B2

公开(公告)日：2022-12-27

申请号：US17023260

申请日：2020-09-16

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Shun-Tsat Tu ,  Pei-Jen Lo ,  Chien-Han Chiu

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/00 ,  H01L23/495

Abstract: A bonding structure is provided. The bonding structure includes a conductive layer, a seed layer, and a nanotwinned copper (NT-Cu) layer. The seed layer is disposed on the conductive layer. The NT-Cu layer is disposed on the seed layer. The NT-Cu layer has anisotropic crystal structure.

公开(公告)号：US11031382B2

公开(公告)日：2021-06-08

申请号：US16151310

申请日：2018-10-03

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Pei-Jen Lo ,  Chien-Han Chiu ,  Wen Hung Huang

IPC: H01L27/01 ,  H01L23/00 ,  H01L49/02

Abstract: An electronic device includes: a first insulation layer and a first conductive pillar. The first insulation layer has a first surface and a second surface opposite to the first surface, and the first conductive pillar comprises a first portion and a second portion. The first portion of the first conductive pillar is surrounded by the first insulation layer. The second portion of the first conductive pillar is disposed on the first surface of the first insulation layer. A height of the second portion of the first conductive pillar is equal to or greater than 10% of a height of the first portion of the conductive pillar.