公开(公告)号：US11373956B2

公开(公告)日：2022-06-28

申请号：US16742788

申请日：2020-01-14

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Min Lung Huang ,  Hung-Jung Tu ,  Hsin Hsiang Wang ,  Chih-Wei Huang ,  Shiuan-Yu Lin

IPC: H01L23/538 ,  H01L23/31 ,  H01L21/768 ,  H01L23/00 ,  H01L23/528

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a first semiconductor device, a first conductive layer and a second conductive layer. The first semiconductor device has a first conductive pad. The first conductive layer is disposed in direct contact with the first conductive pad. The first conductive layer extends along a direction substantially parallel to a surface of the first conductive pad. The second conductive layer is disposed in direct contact with the first conductive pad and spaced apart from the first conductive layer.