公开(公告)号：US11222870B2

公开(公告)日：2022-01-11

申请号：US16796921

申请日：2020-02-20

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Wen-Long Lu ,  Min Lung Huang

IPC分类号： H01L21/48 ,  H01L25/065 ,  H01L23/538 ,  H01L25/00 ,  H01L23/31

摘要： A semiconductor device package includes a first substrate and a second substrate arranged above the first substrate. A first connector is disposed on the first substrate, and a first conductor passes through the second substrate and connects to the first connector.

公开(公告)号：US09960102B2

公开(公告)日：2018-05-01

申请号：US15181072

申请日：2016-06-13

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Chung-Hsi Wu ,  Min Lung Huang

IPC分类号： H01L23/48 ,  H01L21/78 ,  H01L23/00

CPC分类号： H01L23/481 ,  H01L21/78 ,  H01L24/09 ,  H01L24/17 ,  H01L24/81 ,  H01L2224/02371

摘要： A semiconductor package includes a first semiconductor component, a second semiconductor component, and a connecting element. The first semiconductor component includes a first substrate, and a first bonding pad disposed adjacent to a first surface of the first substrate, and at least one conductive via structure extending from a second surface of the first substrate to the first bonding pad. The second semiconductor component includes a second substrate, a redistribution layer disposed adjacent to a first surface of the second substrate, and a second bonding pad disposed on the redistribution layer. The connecting element is disposed between the first bonding pad and the second bonding pad.

公开(公告)号：US12040312B2

公开(公告)日：2024-07-16

申请号：US17893037

申请日：2022-08-22

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Chien-Wei Chang ,  Shang-Wei Yeh ,  Chung-Hsi Wu ,  Min Lung Huang

IPC分类号： H01L25/065 ,  H01L21/56 ,  H01L21/768 ,  H01L23/00 ,  H01L23/31 ,  H01L25/04 ,  H01L25/07 ,  H01L25/075 ,  H01L25/11 ,  H01L25/16

CPC分类号： H01L25/0652 ,  H01L21/566 ,  H01L21/76871 ,  H01L23/3107 ,  H01L23/3192 ,  H01L24/09 ,  H01L24/49 ,  H01L24/85 ,  H01L25/071 ,  H01L25/112 ,  H01L25/042 ,  H01L25/043 ,  H01L25/0756 ,  H01L25/162 ,  H01L2224/02371

摘要： A semiconductor package structure includes a conductive structure, at least one semiconductor element, an encapsulant, a redistribution structure and a plurality of bonding wires. The semiconductor element is disposed on and electrically connected to the conductive structure. The encapsulant is disposed on the conductive structure to cover the semiconductor element. The redistribution structure is disposed on the encapsulant, and includes a redistribution layer. The bonding wires electrically connect the redistribution structure and the conductive structure.

公开(公告)号：US11728282B2

公开(公告)日：2023-08-15

申请号：US16656331

申请日：2019-10-17

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Syu-Tang Liu ,  Min Lung Huang ,  Huang-Hsien Chang ,  Tsung-Tang Tsai ,  Ching-Ju Chen

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/367 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56

CPC分类号： H01L23/562 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/4871 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/3675 ,  H01L23/5383 ,  H01L23/5386 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2924/3512

摘要： A package structure includes a wiring structure, a first electronic device, a second electronic device and a reinforcement structure. The wiring structure includes at least one dielectric layer, and at least one circuit layer in contact with the dielectric layer. The at least one circuit layer includes at least one interconnection portion. The first electronic device and the second electronic device are electrically connected to the wiring structure. The second electronic device is electrically connected to the first electronic device through the at least one interconnection portion of the at least one circuit layer. The reinforcement structure is disposed above the at least one interconnection portion of the at least one circuit layer.

公开(公告)号：US11411073B2

公开(公告)日：2022-08-09

申请号：US16802465

申请日：2020-02-26

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Shao Hsuan Chuang ,  Huang-Hsien Chang ,  Min Lung Huang

IPC分类号： H01L23/64 ,  H01L49/02 ,  H01L21/48 ,  H01L29/94 ,  H01L27/108 ,  H01L23/31

摘要： A semiconductor package device includes a first conductive wall, a second conductive wall, a first insulation wall, a dielectric layer, a first electrode, and a second electrode. The first insulation wall is disposed between the first and second conductive walls. The dielectric layer has a first portion covering a bottom surface of the first conductive wall, a bottom surface of the second conductive wall and a bottom surface of the first insulation wall. The first electrode is electrically connected to the first conductive wall. The second electrode is electrically connected to the second conductive wall.

公开(公告)号：US09852971B1

公开(公告)日：2017-12-26

申请号：US15178066

申请日：2016-06-09

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Wen-Long Lu ,  Min Lung Huang

IPC分类号： H01L23/498 ,  H01L23/31 ,  H01L21/48

CPC分类号： H01L23/49827 ,  H01L21/486 ,  H01L21/6835 ,  H01L23/3157 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2924/181 ,  H01L2924/00012

摘要： An interposer includes an interconnection structure and a redistribution layer. The interconnection structure includes a metal layer, at least one metal via and an isolation material. The metal layer defines at least one through hole having a side wall. The at least one metal via is disposed in the through hole. A space is defined between the at least one metal via and the side wall of the through hole, and the isolation material fills the space. The redistribution layer is disposed on a surface of the interconnection structure and is electrically connected to the metal via.

公开(公告)号：US11428946B2

公开(公告)日：2022-08-30

申请号：US16872052

申请日：2020-05-11

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Yuan-Feng Chiang ,  Tsung-Tang Tsai ,  Min Lung Huang

IPC分类号： G02B27/30 ,  G02B5/00 ,  G02B19/00

摘要： According to various embodiments, a collimator includes a substrate defining a plurality of channels through the substrate. The substrate includes a first surface and a second surface opposite the first surface. Each of the channels includes a first aperture exposed from the first surface, a second aperture between the first surface and the second surface, and a third aperture exposed from the second surface. The first aperture and the third aperture are larger than the second aperture.

公开(公告)号：US10663746B2

公开(公告)日：2020-05-26

申请号：US15347675

申请日：2016-11-09

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Yuan-Feng Chiang ,  Tsung-Tang Tsai ,  Min Lung Huang

IPC分类号： G02B27/30 ,  G02B5/00 ,  G02B19/00

摘要： According to various embodiments, a collimator includes a substrate defining a plurality of channels through the substrate. The substrate includes a first surface and a second surface opposite the first surface. Each of the channels includes a first aperture exposed from the first surface, a second aperture between the first surface and the second surface, and a third aperture exposed from the second surface. The first aperture and the third aperture are larger than the second aperture.

公开(公告)号：US10566279B2

公开(公告)日：2020-02-18

申请号：US15880377

申请日：2018-01-25

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Wen-Long Lu ,  Jen-Kuang Fang ,  Min Lung Huang ,  Chan Wen Liu ,  Ching Kuo Hsu

IPC分类号： H01L23/31 ,  H01L23/522 ,  H01L23/498 ,  H01L21/56 ,  H01L21/48

摘要： A package device includes a circuit layer, at least one conductive segment, an encapsulant and a redistribution layer. The conductive segment is disposed on the circuit layer and has a first surface and a second surface. The encapsulant encapsulates at least a portion of the conductive segment and has a first upper surface. A first portion of the first surface and at least a portion of the second surface of the conductive segment are disposed above the first upper surface of the encapsulant. The redistribution layer is disposed on the encapsulant, the first portion of the first surface of the conductive segment, and the second surface of the conductive segment.

公开(公告)号：US10388598B2

公开(公告)日：2019-08-20

申请号：US15818337

申请日：2017-11-20

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Wen-Long Lu ,  Min Lung Huang

IPC分类号： H01L23/31 ,  H01L23/498 ,  H01L21/48 ,  H01L21/683

摘要： A semiconductor process includes: (a) attaching a metal layer on a carrier; (b) removing a portion of the metal layer to form a through hole and at least one metal via, wherein the at least one metal via is disposed in the through hole, and the at least one metal via is separated from a side wall of the through hole by a space; and (c) forming a redistribution layer on the metal layer, wherein the redistribution layer is electrically connected to the at least one metal via.