公开(公告)号：US20200235056A1

公开(公告)日：2020-07-23

申请号：US16254382

申请日：2019-01-22

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.

Inventor： Chia-Hao SUNG ,  Hsuan-Yu CHEN ,  Yu-Kai LIN

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56

Abstract: A semiconductor device package includes a semiconductor die, a first conductive element, a second conductive element, a metal layer, and a first redistribution layer (RDL). The semiconductor die includes a first surface and a second surface opposite to the first surface. The first conductive element is disposed on the second surface of the semiconductor die. The second conductive element is disposed next to the semiconductor die. The metal layer is disposed on the second conductive element and electrically connected to the second conductive element. The first RDL is disposed on the metal layer and electrically connected to the metal layer.

公开(公告)号：US20220065608A1

公开(公告)日：2022-03-03

申请号：US17008333

申请日：2020-08-31

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsuan-Yu CHEN ,  Ming-Han WANG

IPC: G01B7/16 ,  G01N1/44

Abstract: An apparatus for deformation measurement and a method for deformation measurement are provided. The apparatus includes a housing, a sample holder, a moving mechanism, a first heating device and a second heating device. The sample holder is in the housing. The moving mechanism is over the sample holder. The first heating device is on the moving mechanism. The second heating device is below the sample holder.

公开(公告)号：US20210288002A1

公开(公告)日：2021-09-16

申请号：US17336078

申请日：2021-06-01

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.

Inventor： Chia-Hao SUNG ,  Hsuan-Yu CHEN ,  Yu-Kai LIN

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56

Abstract: A semiconductor device package includes a semiconductor die, a first conductive element, a second conductive element, a metal layer, and a first redistribution layer (RDL). The semiconductor die includes a first surface and a second surface opposite to the first surface. The first conductive element is disposed on the second surface of the semiconductor die. The second conductive element is disposed next to the semiconductor die. The metal layer is disposed on the second conductive element and electrically connected to the second conductive element. The first RDL is disposed on the metal layer and electrically connected to the metal layer.