公开(公告)号：US10141252B2

公开(公告)日：2018-11-27

申请号：US15435143

申请日：2017-02-16

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Yuan-Fu Sung ,  Shin-Hua Chao ,  Ming-Chi Liu ,  Hung-Sheng Chen

IPC: H01L23/495 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31

Abstract: A semiconductor package includes: a passivation layer having a first surface and a second surface opposite to the first surface, the passivation layer defining a through hole extending from the first surface to the second surface, the through hole being further defined by a first sidewall and a second sidewall of the passivation layer; a first conductive layer on the first surface of the passivation layer and the first sidewall; a second conductive layer on the second surface of the passivation layer and the second sidewall; and a third conductive layer between the first conductive layer and the second conductive layer.