公开(公告)号：US20220028800A1

公开(公告)日：2022-01-27

申请号：US16938800

申请日：2020-07-24

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Jui-Tzu CHEN ,  Yu-Hsing LIN ,  Chia-Chieh HU ,  Chun-Cheng KUO ,  Yu-Hsiang CHAO

IPC: H01L23/00 ,  H01L23/16 ,  H01L23/367 ,  H01L21/48

Abstract: Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a die and a stiffener. The substrate has an upper surface. The die is disposed on the upper surface of the substrate. The stiffener is disposed on the upper surface of the substrate and surrounds the die. The stiffener has a first upper surface adjacent to the die, a second upper surface far from the die and a lateral surface extending from the first upper surface to the second upper surface. A first distance between the first upper surface of the stiffener and the upper surface of the substrate is less than a second distance between the second upper surface of the stiffener and the upper surface of the substrate.