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公开(公告)号:US20210287999A1
公开(公告)日:2021-09-16
申请号:US16817407
申请日:2020-03-12
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Fan-Yu MIN , Chen-Hung LEE , Wei-Hang TAI , Yuan-Tzuo LUO , Wen-Yuan CHUANG , Chun-Cheng KUO , Chin-Li KAO
Abstract: A package structure and a manufacturing method are provided. The package structure includes a wiring structure, a first electronic device and a second electronic device. The first electronic device is disposed on the wiring structure. The second electronic device is disposed on the wiring structure. The first electronic device and the second electronic device are disposed side by side. A gap between the first electronic device and the second electronic device is greater than or equal to about 150 μm.
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公开(公告)号:US20170243813A1
公开(公告)日:2017-08-24
申请号:US15049352
申请日:2016-02-22
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Jun-Chieh WU , Yu-Hsiang CHAO , Chung-Yao CHANG , Chun-Cheng KUO
IPC: H01L23/498 , H01L25/065 , H01L23/31 , H01L21/56 , H01L21/48
CPC classification number: H01L23/49811 , H01L21/4853 , H01L21/563 , H01L23/15 , H01L23/3128 , H01L23/315 , H01L23/49827 , H01L23/5384 , H01L23/5385 , H01L24/16 , H01L25/0657 , H01L2224/16227 , H01L2224/48227 , H01L2225/06572 , H01L2924/15311 , H01L2924/15321 , H01L2924/1815
Abstract: The present disclosure relates to a semiconductor device and a method for manufacturing the same. The semiconductor device includes a substrate, a first package body and at least one connecting element. The substrate has a first surface. The first package body is disposed adjacent to the first surface of the substrate, and defines at least one cavity. The connecting element is disposed adjacent to the first surface of the substrate and in a corresponding cavity. A space is defined between a periphery surface of a portion of the connecting element and a sidewall of a portion of the cavity. An end portion of the connecting element extends beyond an outermost surface of the first package body.
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公开(公告)号:US20220028800A1
公开(公告)日:2022-01-27
申请号:US16938800
申请日:2020-07-24
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Jui-Tzu CHEN , Yu-Hsing LIN , Chia-Chieh HU , Chun-Cheng KUO , Yu-Hsiang CHAO
IPC: H01L23/00 , H01L23/16 , H01L23/367 , H01L21/48
Abstract: Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a die and a stiffener. The substrate has an upper surface. The die is disposed on the upper surface of the substrate. The stiffener is disposed on the upper surface of the substrate and surrounds the die. The stiffener has a first upper surface adjacent to the die, a second upper surface far from the die and a lateral surface extending from the first upper surface to the second upper surface. A first distance between the first upper surface of the stiffener and the upper surface of the substrate is less than a second distance between the second upper surface of the stiffener and the upper surface of the substrate.
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