公开(公告)号：US20220115341A1

公开(公告)日：2022-04-14

申请号：US17556729

申请日：2021-12-20

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Meng-Wei HSIEH ,  Kuo-Chang KANG

IPC: H01L23/66 ,  H01L23/00 ,  H01L21/768 ,  H01L23/373

Abstract: A semiconductor device package includes a first circuit layer, a first emitting device and a second emitting device. The first circuit layer has a first surface and a second surface opposite to the first surface. The first emitting device is disposed on the second surface of the first circuit layer. The first emitting device has a first surface facing the first circuit layer and a second surface opposite to the first surface. The first emitting device has a first conductive pattern disposed on the first surface of the first emitting device. The second emitting device is disposed on the second surface of the first emitting device. The second emitting device has a first surface facing the second surface of the first emitting device and a second surface opposite to the first surface. The second emitting device has a second conductive pattern disposed on the second surface of the emitting device. A coefficient of thermal expansion (CTE) of the first emitting device is greater than a CTE of the second emitting device.

公开(公告)号：US20250087606A1

公开(公告)日：2025-03-13

申请号：US18959569

申请日：2024-11-25

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Meng-Wei HSIEH ,  Kuo-Chang KANG

IPC: H01L23/66 ,  H01L21/768 ,  H01L23/00 ,  H01L23/373

Abstract: A semiconductor device package includes a first circuit layer, a first emitting device and a second emitting device. The first circuit layer has a first surface and a second surface opposite to the first surface. The first emitting device is disposed on the second surface of the first circuit layer. The first emitting device has a first surface facing the first circuit layer and a second surface opposite to the first surface. The first emitting device has a first conductive pattern disposed on the first surface of the first emitting device. The second emitting device is disposed on the second surface of the first emitting device. The second emitting device has a first surface facing the second surface of the first emitting device and a second surface opposite to the first surface. The second emitting device has a second conductive pattern disposed on the second surface of the emitting device. A coefficient of thermal expansion (CTE) of the first emitting device is greater than a CTE of the second emitting device.

公开(公告)号：US20210249368A1

公开(公告)日：2021-08-12

申请号：US16789243

申请日：2020-02-12

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Meng-Wei HSIEH ,  Kuo-Chang KANG

IPC: H01L23/66 ,  H01L23/00 ,  H01L23/373 ,  H01L21/768

Abstract: A semiconductor device package includes a first circuit layer, a first emitting device and a second emitting device. The first circuit layer has a first surface and a second surface opposite to the first surface. The first emitting device is disposed on the second surface of the first circuit layer. The first emitting device has a first surface facing the first circuit layer and a second surface opposite to the first surface. The first emitting device has a first conductive pattern disposed on the first surface of the first emitting device. The second emitting device is disposed on the second surface of the first emitting device. The second emitting device has a first surface facing the second surface of the first emitting device and a second surface opposite to the first surface. The second emitting device has a second conductive pattern disposed on the second surface of the emitting device. A coefficient of thermal expansion (CTE) of the first emitting device is greater than a CTE of the second emitting device.