公开(公告)号：US20220181268A1

公开(公告)日：2022-06-09

申请号：US17111350

申请日：2020-12-03

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Cheng-Yuan KUNG ,  Hung-Yi LIN ,  Meng-Wei HSIEH ,  Yu-Pin TSAI

IPC: H01L23/552 ,  H01L21/50 ,  H01L23/31

Abstract: A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a device package and a shielding layer. The device package includes an electronic device unit and has a first surface, a second surface opposite to the first surface, and a third surface connecting the first surface to the second surface. The shielding layer is disposed on the first surface and the second surface of the device package. A common edge of the second surface and the third surface includes a first portion exposed from the shielding layer by a first length, and a common edge of the first surface and the third surface includes a second portion exposed from the shielding layer by a second length that is different from the first length.

公开(公告)号：US20210210423A1

公开(公告)日：2021-07-08

申请号：US16737817

申请日：2020-01-08

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Yung-Shun CHANG ,  Meng-Wei HSIEH ,  Teck-Chong LEE

IPC: H01L23/522 ,  H01L23/00 ,  H01L23/528 ,  H01L23/31 ,  H01L21/56 ,  H01L21/768

Abstract: A semiconductor package structure includes a semiconductor die and at least one pillar structure. The semiconductor die has an upper surface and includes at least one conductive pad disposed adjacent to the upper surface. The pillar structure is electrically connected to the conductive pad of the semiconductor die, and defines a recess portion recessed from a side surface of the pillar structure. A conductivity of the pillar structure is greater than a conductivity of the conductive pad.

公开(公告)号：US20210265280A1

公开(公告)日：2021-08-26

申请号：US16798170

申请日：2020-02-21

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsu-Chiang SHIH ,  Hung-Yi LIN ,  Meng-Wei HSIEH ,  Yu Sheng CHANG ,  Hsiu-Chi LIU ,  Mark GERBER

IPC: H01L23/00 ,  H01L23/48 ,  H01L23/528 ,  H01L21/56

Abstract: A semiconductor device package includes an electronic component, an electrical contact and a reinforcement layer. The electronic component has a first conductive layer on a first surface of the electronic component. The electronic component has a through-silicon-via (TSV) penetrating the electronic component and electrically connected to the first conductive layer. The electrical contact is disposed on the first surface of the electronic component and electrically connected to the first conductive layer. The reinforcement layer is disposed on the first surface of the electronic component.

公开(公告)号：US20210202406A1

公开(公告)日：2021-07-01

申请号：US16727723

申请日：2019-12-26

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Meng-Wei HSIEH

IPC: H01L23/66 ,  H01L23/522 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

Abstract: A semiconductor device package includes a first circuit layer and an emitting device. The first circuit layer has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The emitting device is disposed on the second surface of the first circuit layer. The emitting device has a first surface facing the second surface of the first circuit layer, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The emitting device has a conductive pattern disposed on the second surface of the emitting device. The lateral surface of the emitting device and the lateral surface of the first circuit layer are discontinuous.

公开(公告)号：US20230017013A1

公开(公告)日：2023-01-19

申请号：US17377169

申请日：2021-07-15

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Meng-Wei HSIEH ,  Hsiu-Chi LIU

IPC: H01L23/31 ,  H01L23/00 ,  H01L23/552 ,  H01L21/56

Abstract: A semiconductor package structure and a method of manufacturing the same are provided. The semiconductor package structure includes a first electronic component, a second electronic component, and a reinforcement component. The reinforcement component is disposed above the first electronic component and the second electronic component. The reinforcement component is configured to reduce warpage.

公开(公告)号：US20220359425A1

公开(公告)日：2022-11-10

申请号：US17752795

申请日：2022-05-24

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsu-Chiang SHIH ,  Hung-Yi LIN ,  Meng-Wei HSIEH ,  Yu Sheng CHANG ,  Hsiu-Chi LIU ,  Mark GERBER

IPC: H01L23/00 ,  H01L23/48 ,  H01L21/56 ,  H01L23/528

Abstract: A semiconductor device package includes an electronic component, an electrical contact and a reinforcement layer. The electronic component has a first conductive layer on a first surface of the electronic component. The electronic component has a through-silicon-via (TSV) penetrating the electronic component and electrically connected to the first conductive layer. The electrical contact is disposed on the first surface of the electronic component and electrically connected to the first conductive layer. The reinforcement layer is disposed on the first surface of the electronic component.

公开(公告)号：US20220200129A1

公开(公告)日：2022-06-23

申请号：US17133358

申请日：2020-12-23

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Cheng-Yu HO ,  Meng-Wei HSIEH

IPC: H01Q1/22 ,  H01L23/31 ,  H01L23/538 ,  H01L23/66 ,  H01L23/00 ,  H01L21/48 ,  H01Q1/48

Abstract: The present disclosure provides an antenna module. The antenna module includes an antenna layer, a ground layer, and an electronic component. The ground layer is disposed over the antenna layer. The electronic component is disposed between the antenna layer and the ground layer.

公开(公告)号：US20220115341A1

公开(公告)日：2022-04-14

申请号：US17556729

申请日：2021-12-20

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Meng-Wei HSIEH ,  Kuo-Chang KANG

IPC: H01L23/66 ,  H01L23/00 ,  H01L21/768 ,  H01L23/373

Abstract: A semiconductor device package includes a first circuit layer, a first emitting device and a second emitting device. The first circuit layer has a first surface and a second surface opposite to the first surface. The first emitting device is disposed on the second surface of the first circuit layer. The first emitting device has a first surface facing the first circuit layer and a second surface opposite to the first surface. The first emitting device has a first conductive pattern disposed on the first surface of the first emitting device. The second emitting device is disposed on the second surface of the first emitting device. The second emitting device has a first surface facing the second surface of the first emitting device and a second surface opposite to the first surface. The second emitting device has a second conductive pattern disposed on the second surface of the emitting device. A coefficient of thermal expansion (CTE) of the first emitting device is greater than a CTE of the second emitting device.

公开(公告)号：US20250087606A1

公开(公告)日：2025-03-13

申请号：US18959569

申请日：2024-11-25

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Meng-Wei HSIEH ,  Kuo-Chang KANG

IPC: H01L23/66 ,  H01L21/768 ,  H01L23/00 ,  H01L23/373

Abstract: A semiconductor device package includes a first circuit layer, a first emitting device and a second emitting device. The first circuit layer has a first surface and a second surface opposite to the first surface. The first emitting device is disposed on the second surface of the first circuit layer. The first emitting device has a first surface facing the first circuit layer and a second surface opposite to the first surface. The first emitting device has a first conductive pattern disposed on the first surface of the first emitting device. The second emitting device is disposed on the second surface of the first emitting device. The second emitting device has a first surface facing the second surface of the first emitting device and a second surface opposite to the first surface. The second emitting device has a second conductive pattern disposed on the second surface of the emitting device. A coefficient of thermal expansion (CTE) of the first emitting device is greater than a CTE of the second emitting device.

公开(公告)号：US20230369188A1

公开(公告)日：2023-11-16

申请号：US17744460

申请日：2022-05-13

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Meng-Wei HSIEH

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L25/065

CPC classification number: H01L23/49822 ,  H01L23/562 ,  H01L23/49827 ,  H01L23/3107 ,  H01L23/49894 ,  H01L25/0655

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a substrate, a first electronic component, and an electronic device. The first electronic component is disposed over the substrate. The electronic device is at least partially embedded in the substrate. The electronic device includes a second electronic component and a reinforcement. The second electronic component is configured for providing a regulated voltage to the first electronic component. The reinforcement supports the second electronic component.