公开(公告)号：US20220336406A1

公开(公告)日：2022-10-20

申请号：US17233245

申请日：2021-04-16

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Yi Dao WANG ,  Tung Yao LIN ,  Rong He GUO

IPC: H01L23/00

Abstract: A method for manufacturing a semiconductor package structure is provided. The method includes: (a) providing a semiconductor structure including a first device and a second device; (b) irradiating the first device by a first energy-beam with a first irradiation area; and (c) irradiating the first device and the second device by a second energy-beam with a second irradiation area greater than the first irradiation area of the first energy-beam.

公开(公告)号：US20230230953A1

公开(公告)日：2023-07-20

申请号：US18123967

申请日：2023-03-20

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Yi Dao WANG ,  Tung Yao LIN ,  Rong He GUO

IPC: H01L23/00

CPC classification number: H01L24/81 ,  H01L24/83 ,  H01L2224/83224 ,  H01L2224/81224

Abstract: A method for manufacturing a semiconductor package structure is provided. The method includes: (a) providing a semiconductor structure including a first device and a second device; (b) irradiating the first device by a first energy-beam with a first irradiation area; and (c) irradiating the first device and the second device by a second energy-beam with a second irradiation area greater than the first irradiation area of the first energy-beam.

公开(公告)号：US20220399303A1

公开(公告)日：2022-12-15

申请号：US17344741

申请日：2021-06-10

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Yi Dao WANG ,  Tung Yao LIN ,  Rong He GUO

IPC: H01L23/00 ,  H01L25/065 ,  H01L21/48 ,  H01L25/00

Abstract: A method for manufacturing a semiconductor package structure is provided. The method includes: (a) providing a substrate, wherein an upper surface of the substrate includes a predetermined region and an energy-absorbing region adjacent to the predetermined region; (b) disposing a first device in the predetermined region of the upper surface of the substrate; and (c) bonding the first device to the substrate by irradiating an upper surface of the first device with an energy-beam, wherein a center of the energy-beam is moved toward the energy-absorbing region from a first position before bonding.