公开(公告)号：US20220139854A1

公开(公告)日：2022-05-05

申请号：US17084496

申请日：2020-10-29

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wan Yu CHANG ,  Shao Hsuan CHUANG

IPC: H01L23/00 ,  H01L23/31

Abstract: A bonding structure, a package structure, and a method for manufacturing a package structure are provided. The package structure includes a first substrate, a first passivation layer, a first conductive layer, and a first conductive bonding structure. The first passivation layer is disposed on the first substrate and has an upper surface. The first passivation layer and the first substrate define a first cavity. The first conductive layer is disposed in the first cavity and has an upper surface. A portion of the upper surface of the first conductive layer is below the upper surface of the first passivation layer. The first conductive bonding structure is disposed on the first conductive layer.