公开(公告)号：US20210358859A1

公开(公告)日：2021-11-18

申请号：US16874524

申请日：2020-05-14

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming-Hung CHEN ,  Hui-Ping JIAN ,  Wei-Zhen QIU

IPC: H01L23/552

Abstract: The present disclosure provides for a semiconductor device package and a method for manufacturing the same. The semiconductor device package includes a substrate, a conductive element and conductive layers. The substrate has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The conductive element is disposed on the first surface of the substrate. The conductive layers have a first portion on the conductive element and a second portion on the lateral surface of the substrate. A number of layers of the first portion of the conductive layers is different from a number of layers of the second portion of the conductive layers.