SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20230005970A1

    公开(公告)日:2023-01-05

    申请号:US17903922

    申请日:2022-09-06

    Abstract: A semiconductor device package includes a main substrate, at least one thin film transistor (TFT) module, at least one first electronic component, at least one encapsulant and a plurality of light emitting devices. The main substrate has a first surface and a second surface opposite to the first surface. The thin film transistor (TFT) module is disposed adjacent to and electrically connected to the first surface of the main substrate. The first electronic component is disposed adjacent to and electrically connected to the first surface of the main substrate. The encapsulant covers the at least one thin film transistor (TFT) module and the at least one first electronic component. The light emitting devices are electrically connected to the at least one thin film transistor (TFT) module.

    SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20210358859A1

    公开(公告)日:2021-11-18

    申请号:US16874524

    申请日:2020-05-14

    Abstract: The present disclosure provides for a semiconductor device package and a method for manufacturing the same. The semiconductor device package includes a substrate, a conductive element and conductive layers. The substrate has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The conductive element is disposed on the first surface of the substrate. The conductive layers have a first portion on the conductive element and a second portion on the lateral surface of the substrate. A number of layers of the first portion of the conductive layers is different from a number of layers of the second portion of the conductive layers.

    ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20220346239A1

    公开(公告)日:2022-10-27

    申请号:US17239475

    申请日:2021-04-23

    Abstract: The present disclosure provides an electronic device and method of manufacturing the same. The electronic device includes a first region, a second region, an electronic component, and a first sensing element. The second region is adjacent to the first region. The first region has a first pliability. The second region has a second pliability. The second pliability is greater than the first pliability. The electronic component is disposed at the first region. The first sensing element is disposed at the second region and electrically connected to the electronic component.

    SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20210057572A1

    公开(公告)日:2021-02-25

    申请号:US16550110

    申请日:2019-08-23

    Abstract: A semiconductor device package includes a display device, an electronic module and a conductive adhesion layer. The display device includes a first substrate and a TFT layer. The first substrate has a first surface and a second surface opposite to the first surface. The TFT layer is disposed on the first surface of the first substrate. The electronic module includes a second substrate and an electronic component. The second substrate has a first surface facing the second surface of the first substrate and a second surface opposite to the first surface. The electronic component is disposed on the second surface of the second substrate. The conductive adhesion layer is disposed between the first substrate and the second substrate.

    SEMICONDUCTOR DEVICE PACKAGE
    10.
    发明申请

    公开(公告)号:US20180358290A1

    公开(公告)日:2018-12-13

    申请号:US15618084

    申请日:2017-06-08

    Abstract: A semiconductor device package includes a substrate, a first insulation layer, a support film and an interconnection structure. The substrate has a first sidewall, a first surface and a second surface opposite to the first surface. The first insulation layer is on the first surface of the substrate and has a second sidewall. The first insulation layer has a first surface and a second surface adjacent to the substrate and opposite to the first surface of the first insulation layer. The support film is on the second surface of the substrate and has a third sidewall. The support film has a first surface adjacent to the substrate and a second surface opposite to the first surface of the support film. The interconnection structure extends from the first surface of the first insulation layer to the second surface of the support film via the first insulation layer and the support film. The interconnection structure covers the first, second and third sidewalls.

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