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    ORGANIC INVERTER AND METHOD OF FORMING THE SAME
    2.
    发明申请
    ORGANIC INVERTER AND METHOD OF FORMING THE SAME 审中-公开

    公开(公告)号：US20170345871A1

    公开(公告)日：2017-11-30

    申请号：US15607877

    申请日：2017-05-30

    Applicant: Agency for Science, Technology and Research

    Inventor： Aung Ko Ko Kyaw ,  Jie Zhang ,  Changyun Jiang

    IPC: H01L27/28 ,  H01L51/00 ,  H01L51/05

    CPC classification number: H01L27/283 ,  H01L51/0012 ,  H01L51/0096 ,  H01L51/0558

    Abstract: Various embodiments provide a method of forming an organic inverter including a first transistor and a second transistor. The method may include providing a substrate with a dielectric layer formed on top of the substrate; depositing a first semiconductor polymer layer on a first region of the dielectric layer; forming a first electrode and a second electrode on the first semiconductor polymer layer, thereby forming the first transistor located at the first region of the dielectric layer; forming a plurality of grooves on a surface of a second region of the dielectric layer; depositing a second semiconductor polymer layer on the second region of the dielectric layer; and forming a first electrode and a second electrode on the second semiconductor polymer layer, thereby forming the second transistor located at the second region of the dielectric layer.

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