公开(公告)号：US20240142679A1

公开(公告)日：2024-05-02

申请号：US18279024

申请日：2021-03-04

Applicant: Agency for Science, Technology and Research

Inventor： Conglin Sun ,  Chong Pei Ho ,  Lennon Yao Ting Lee

IPC: G02B5/20

CPC classification number: G02B5/208

Abstract: An absorber and a method of forming an absorber. The absorber may include a semiconductor absorption structure doped with dopants of a first conductivity type. The absorber may also include a semiconductor substrate doped with dopants of a second conductivity type different from the first conductivity type. The absorber may further include a dielectric layer between the semiconductor absorption structure and the semiconductor substrate. The absorber may additionally include a buried semiconductor structure included in a cavity of the dielectric layer, the buried semiconductor structure doped with dopants of the first conductivity type.