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公开(公告)号:US09287209B2
公开(公告)日:2016-03-15
申请号:US13338492
申请日:2011-12-28
申请人: Agnes Neves Woo , Pascal Tran , Akira Ito , Guang-Jye Shiau , Chao-Yang Lu , Jung Wang
发明人: Agnes Neves Woo , Pascal Tran , Akira Ito , Guang-Jye Shiau , Chao-Yang Lu , Jung Wang
IPC分类号: H01L23/522 , H01L27/02 , H01L27/01 , H01L49/02
CPC分类号: H01L23/5223 , H01L23/522 , H01L23/5222 , H01L23/5225 , H01L27/016 , H01L27/0207 , H01L28/86 , H01L28/90 , H01L2924/0002 , H01L2924/00
摘要: Embodiments described herein provide a structure for finger capacitors, and more specifically metal-oxide-metal (“MOM”) finger capacitors and arrays of finger capacitors. A plurality of Shallow Trench Isolation (STI) formations is associated with every other column of capacitor fingers, with poly fill formations covering the STI formations to provide a more robust and efficient structure.
摘要翻译: 本文描述的实施例提供了用于手指电容器,更具体地金属氧化物金属(“MOM”)指状电容器和指状电容器阵列的结构。 多个浅沟槽隔离(STI)结构与电容器手指的每隔一列相关联,多层填充层覆盖STI构造以提供更坚固和更有效的结构。
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公开(公告)号:US20130113077A1
公开(公告)日:2013-05-09
申请号:US13338492
申请日:2011-12-28
申请人: Agnes Neves WOO , Pascal Tran , Akira Ito , Guang-Jye Shiau , Chao-Yang Lu , Jung Wang
发明人: Agnes Neves WOO , Pascal Tran , Akira Ito , Guang-Jye Shiau , Chao-Yang Lu , Jung Wang
IPC分类号: H01L29/02
CPC分类号: H01L23/5223 , H01L23/522 , H01L23/5222 , H01L23/5225 , H01L27/016 , H01L27/0207 , H01L28/86 , H01L28/90 , H01L2924/0002 , H01L2924/00
摘要: Embodiments described herein provide a structure for finger capacitors, and more specifically metal-oxide-metal (“MOM”) finger capacitors and arrays of finger capacitors. A plurality of Shallow Trench Isolation (STI) formations is associated with every other column of capacitor fingers, with poly fill formations covering the STI formations to provide a more robust and efficient structure.
摘要翻译: 本文描述的实施例提供了用于手指电容器,更具体地金属氧化物金属(“MOM”)指状电容器和指状电容器阵列的结构。 多个浅沟槽隔离(STI)结构与电容器手指的每隔一列相关联,多层填充层覆盖STI构造以提供更坚固和更有效的结构。
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公开(公告)号:US08841674B2
公开(公告)日:2014-09-23
申请号:US13174083
申请日:2011-06-30
申请人: Chao-Yang Lu , Guang-Jye Shiau , Akira Ito
发明人: Chao-Yang Lu , Guang-Jye Shiau , Akira Ito
CPC分类号: H01L29/7839 , G11C17/16
摘要: According to embodiments of the invention, a field transistor structure is provided. The field transistor structure includes a semiconductor substrate, a metal gate, a polycrystalline silicon (polysilicon) layer, and first and second metal portions. The polysilicon layer has first, second, third, and fourth sides and is disposed between the semiconductor substrate on the first side and the metal gate on the second side. The polysilicon layer is also disposed between the first and second metal portions on the third and fourth sides. According to some embodiments of the present invention, the field transistor structure may also include a thin metal layer disposed between the polysilicon layer and the semiconductor substrate. The thin metal layer may be electronically coupled to each of the first and second metal portions.
摘要翻译: 根据本发明的实施例,提供了场晶体管结构。 场晶体管结构包括半导体衬底,金属栅极,多晶硅(多晶硅)层以及第一和第二金属部分。 多晶硅层具有第一,第二,第三和第四边,并且设置在第一侧的半导体衬底和第二侧上的金属栅极之间。 多晶硅层也设置在第三和第四侧上的第一和第二金属部分之间。 根据本发明的一些实施例,场晶体管结构还可以包括设置在多晶硅层和半导体衬底之间的薄金属层。 薄金属层可以电连接到第一和第二金属部分中的每一个。
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公开(公告)号:US20130001574A1
公开(公告)日:2013-01-03
申请号:US13174083
申请日:2011-06-30
申请人: Chao-Yang Lu , Guang-Jye Shiau , Akira Ito
发明人: Chao-Yang Lu , Guang-Jye Shiau , Akira Ito
CPC分类号: H01L29/7839 , G11C17/16
摘要: According to embodiments of the invention, a field transistor structure is provided. The field transistor structure includes a semiconductor substrate, a metal gate, a polycrystalline silicon (polysilicon) layer, and first and second metal portions. The polysilicon layer has first, second, third, and fourth sides and is disposed between the semiconductor substrate on the first side and the metal gate on the second side. The polysilicon layer is also disposed between the first and second metal portions on the third and fourth sides. According to some embodiments of the present invention, the field transistor structure may also include a thin metal layer disposed between the polysilicon layer and the semiconductor substrate. The thin metal layer may be electronically coupled to each of the first and second metal portions.
摘要翻译: 根据本发明的实施例,提供了场晶体管结构。 场晶体管结构包括半导体衬底,金属栅极,多晶硅(多晶硅)层以及第一和第二金属部分。 多晶硅层具有第一,第二,第三和第四边,并且设置在第一侧的半导体衬底和第二侧上的金属栅极之间。 多晶硅层也设置在第三和第四侧上的第一和第二金属部分之间。 根据本发明的一些实施例,场晶体管结构还可以包括设置在多晶硅层和半导体衬底之间的薄金属层。 薄金属层可以电连接到第一和第二金属部分中的每一个。
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