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公开(公告)号:US20100317311A1
公开(公告)日:2010-12-16
申请号:US12481702
申请日:2009-06-10
申请人: Ahmad MIRZAEI , Hooman DARABI , Yuyu CHANG
发明人: Ahmad MIRZAEI , Hooman DARABI , Yuyu CHANG
IPC分类号: H04B1/10
CPC分类号: H04B1/1036 , H03H19/008
摘要: Embodiments of a SAW-less RF receiver front-end that includes a frequency translated notch filter (FTNF) are presented. An FTNF includes a passive mixer and a baseband impedance. The baseband impedance includes capacitors that form a low-Q band-stop filter. The passive mixer is configured to translate the baseband impedance to a higher frequency. The translated baseband impedance forms a high-Q notch filter and is presented at the input of the FTNF. The FTNF can be fully integrated in CMOS IC technology (or others, e.g., Bipolar, BiCMOS, and SiGe) and applied in wireless receiver systems including GSM, EDGE, Wideband Code Division Multiple Access (WCDMA), Bluetooth, and wireless LANs (e.g., IEEE 802.11). In addition, embodiments of an apparatus to protect SAW-less RF receiver front-ends are presented.
摘要翻译: 提供了包括频率转换陷波滤波器(FTNF)的无SAW无RF接收机前端的实施例。 FTNF包括无源混频器和基带阻抗。 基带阻抗包括形成低Q带阻滤波器的电容器。 无源混频器被配置为将基带阻抗转换到更高的频率。 经翻译的基带阻抗形成高Q陷波滤波器,并呈现在FTNF的输入端。 FTNF可以完全集成到CMOS IC技术(或其他,例如双极,BiCMOS和SiGe)中,并应用于无线接收机系统,包括GSM,EDGE,宽带码分多址(WCDMA),蓝牙和无线局域网(例如 ,IEEE 802.11)。 另外,还提出了用于保护无SAW射频接收器前端的装置的实施例。
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公开(公告)号:US20110003574A1
公开(公告)日:2011-01-06
申请号:US12496325
申请日:2009-07-01
申请人: Yuyu CHANG , Hooman DARABI
发明人: Yuyu CHANG , Hooman DARABI
CPC分类号: G05F3/242
摘要: Embodiments of the present invention provide constant output DC biasing circuits. Embodiments employ an open loop scheme, instead of a closed loop scheme as used in conventional circuits. In addition, embodiments generate a DC bias voltage that is independent of temperature, process, and power supply variations. Further, embodiments require low amounts of power and silicon.
摘要翻译: 本发明的实施例提供恒定的输出DC偏置电路。 实施例采用开环方案,而不是常规电路中使用的闭环方案。 此外,实施例产生独立于温度,过程和电源变化的DC偏置电压。 此外,实施例需要少量的功率和硅。
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