Apparatus and methods for determining critical area of semiconductor design data
    1.
    发明授权
    Apparatus and methods for determining critical area of semiconductor design data 有权
    用于确定半导体设计数据临界面积的装置和方法

    公开(公告)号:US06918101B1

    公开(公告)日:2005-07-12

    申请号:US10281416

    申请日:2002-10-24

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5081

    摘要: Disclosed are mechanisms for efficiently and accurately calculating critical area. In general terms, a method for determining a critical area for a semiconductor design layout is disclosed. The critical area is utilizable to predict yield of a semiconductor device fabricated from such layout. A semiconductor design layout having a plurality of features is first provided. The features have a plurality of polygon shapes which include nonrectangular polygon shapes. Each feature shape has at least one attribute or artifact, such as a vertex or edge. A probability of fail function is calculated based on at least a distance between two feature shape attributes or artifacts. By way of example implementations, a distance between two neighboring feature edges (or vertices) or a distance between two feature edges (or vertices) of the same feature is first determined and then used to calculate the probability of fail function. In a specific aspect, the distances are first used to determine midlines between neighboring features or midlines within a same feature shape, and the midlines are then used to determine the probability of fail function. A critical area of the design layout is then determined based on the determined probability of fail function. In specific implementations, the defect type is a short type defect or an open type defect. In a preferred implementation, the features may have any suitable polygonal shape, as is typical in a design layout.

    摘要翻译: 公开了高效准确地计算关键区域的机制。 一般来说,公开了一种用于确定半导体设计布局的临界区域的方法。 关键区域可用于预测由这种布局制造的半导体器件的产量。 首先提供具有多个特征的半导体设计布局。 特征具有包括非矩形多边形形状的多个多边形形状。 每个特征形状至少有一个属性或工件,例如顶点或边。 基于至少两个特征形状属性或伪影之间的距离来计算失败函数的概率。 作为示例实现,首先确定两个相邻特征边缘(或顶点)之间的距离或相同特征的两个特征边缘(或顶点)之间的距离,然后用于计算故障功能的概率。 在特定方面,首先用距离来确定相同特征形状中的相邻特征或中线之间的中线,然后使用中线来确定失败功能的概率。 然后根据所确定的故障功能概率来确定设计布局的关键区域。 在具体实施中,缺陷类型是短型缺陷或开放型缺陷。 在优选的实施方案中,特征可以具有任何合适的多边形形状,如在设计布局中典型的。