公开(公告)号：US4173674A

公开(公告)日：1979-11-06

申请号：US888981

申请日：1978-03-22

申请人： Akio Mimura ,  Takaya Suzuki ,  Seturo Yagiyu

发明人： Akio Mimura ,  Takaya Suzuki ,  Seturo Yagiyu

IPC分类号： H01L21/762 ,  B32B7/00 ,  B32B9/04 ,  H01L21/304 ,  H01L21/316

CPC分类号： H01L21/76297 ,  Y10T428/265

摘要： A dielectric insulator separated substrate comprises a plurality of monocrystalline semiconductor island regions in which circuit elements are to be formed and a support region for supporting the island regions while a dielectric film formed on the supporting region electrically separates the island regions from each other. The supporting region comprises crystalline semiconductor layers and at least one oxygen diffusion preventive film laminated alternately.The extreme outer polycrystalline semiconductor layer of the supporting region is polished to such a thickness as to prevent the substrate from being curved greatly by the wedge action due to the oxygen diffusion. Since the extreme outer polycrystalline semiconductor layer thus polished has a flat surface, the handling of the substrate is easy. The substrate devoid of any curveness deformation assures a highly accurate formation of the circuit elements in the island regions.

摘要翻译： 介质绝缘体分离衬底包括要形成电路元件的多个单晶半导体岛区域和用于支撑岛区的支撑区域，同时形成在支撑区域上的电介质膜将岛区彼此电分离。 支撑区域包括结晶半导体层和交替层压的至少一个氧扩散防止膜。 支撑区域的极外部多晶半导体层被抛光到这样的厚度，以防止由于氧扩散而产生的楔形作用使衬底大大弯曲。 由于这样抛光的极外部多晶半导体层具有平坦的表面，所以基板的处理容易。 没有任何弯曲变形的基板确保岛状区域中的电路元件的高精度地形成。