公开(公告)号：US20100308349A1

公开(公告)日：2010-12-09

申请号：US12797042

申请日：2010-06-09

申请人： Akira Ohmae ,  Shigetaka Tomiya ,  Yuki Maeda ,  Michinori Shiomi ,  Takaaki Ami ,  Takao Miyajima ,  Katsunori Yanashima ,  Takashi Tange ,  Atsushi Yasuda

发明人： Akira Ohmae ,  Shigetaka Tomiya ,  Yuki Maeda ,  Michinori Shiomi ,  Takaaki Ami ,  Takao Miyajima ,  Katsunori Yanashima ,  Takashi Tange ,  Atsushi Yasuda

IPC分类号： H01L33/08 ,  H01L33/30

CPC分类号： H01L33/007 ,  H01L33/12 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/1305 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting diode with (a) a substrate having at least one recessed portion on one main surface; (b) a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and (c) a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer, wherein, a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface.

摘要翻译： 一种发光二极管，其具有（a）在一个主表面上具有至少一个凹部的基板; （b）在所述基板上生长的第六氮化物基III-V族化合物半导体层，而不在所述凹部中形成空间; 和（c）在第六氮化物基上形成的第二导电类型的第一导电类型，有源层和第四氮化物基III-V族化合物半导体层的第三氮化物基III-V族化合物半导体层 III-V族化合物半导体层，其中，所述第六氮化物系III-V族化合物半导体层中的与所述凹部的底面的界面在与所述一个主面垂直的方向上的位错发生位错到达 具有凹部的底面的三角形的倾斜面或其附近为基部，并且在与该一个主面平行的方向上弯曲。

公开(公告)号：US07754504B2

公开(公告)日：2010-07-13

申请号：US11383526

申请日：2006-05-16

申请人： Akira Ohmae ,  Shigetaka Tomiya ,  Yuki Maeda ,  Michinori Shiomi ,  Takaaki Ami ,  Takao Miyajima ,  Katsunori Yanashima ,  Takashi Tange ,  Atsushi Yasuda

发明人： Akira Ohmae ,  Shigetaka Tomiya ,  Yuki Maeda ,  Michinori Shiomi ,  Takaaki Ami ,  Takao Miyajima ,  Katsunori Yanashima ,  Takashi Tange ,  Atsushi Yasuda

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L33/12 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/1305 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V group compound semiconductor layer through a state of making a triangle in section having a bottom surface of the recessed portion as a base thereby burying the recessed portion; laterally growing a second nitride-based III-V group compound semiconductor layer from the first nitride-based III-V group compound semiconductor layer over the substrate; and successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer.

摘要翻译： 一种制造发光二极管的方法，其包括以下步骤：提供在一个主表面上具有至少一个凹部的基板，并且通过制作三角形的状态生长第一氮化物基III-V族化合物半导体层 所述凹部具有作为所述凹部的底面，从而埋设所述凹部; 从衬底上的第一氮化物基III-V族化合物半导体层横向生长第二氮化物基III-V族化合物半导体层; 并且在第二氮化物基III-V族化合物上依次生长第二导电类型的第一导电类型，有源层和第四氮化物基III-V族化合物半导体层的第三氮化物基III-V族化合物半导体层， V族化合物半导体层。

公开(公告)号：US20060258027A1

公开(公告)日：2006-11-16

申请号：US11383526

申请日：2006-05-16

申请人： Akira Ohmae ,  Shigetaka Tomiya ,  Yuki Maeda ,  Michinori Shiomi ,  Takaaki Ami ,  Takao Miyajima ,  Katsunori Yanashima ,  Takashi Tange ,  Atsushi Yasuda

发明人： Akira Ohmae ,  Shigetaka Tomiya ,  Yuki Maeda ,  Michinori Shiomi ,  Takaaki Ami ,  Takao Miyajima ,  Katsunori Yanashima ,  Takashi Tange ,  Atsushi Yasuda

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L33/12 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/1305 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V group compound semiconductor layer through a state of making a triangle in section having a bottom surface of the recessed portion as a base thereby burying the recessed portion; laterally growing a second nitride-based III-V group compound semiconductor layer from the first nitride-based III-V group compound semiconductor layer over the substrate; and successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer.

摘要翻译： 一种制造发光二极管的方法，其包括以下步骤：提供在一个主表面上具有至少一个凹部的基板，并且通过制作三角形的状态生长第一氮化物基III-V族化合物半导体层 所述凹部具有作为所述凹部的底面，从而埋设所述凹部; 从衬底上的第一氮化物基III-V族化合物半导体层横向生长第二氮化物基III-V族化合物半导体层; 并且在第二氮化物基III-V族化合物上依次生长第二导电类型的第一导电类型，有源层和第四氮化物基III-V族化合物半导体层的第三氮化物基III-V族化合物半导体层， V族化合物半导体层。

公开(公告)号：US20130022070A1

公开(公告)日：2013-01-24

申请号：US13521678

申请日：2011-11-11

申请人： Takashi Tange ,  Shigetaka Tomiya

发明人： Takashi Tange ,  Shigetaka Tomiya

IPC分类号： H01S5/02 ,  H01L33/44

CPC分类号： H01S5/0282 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/028 ,  H01S5/22 ,  H01S5/343

摘要： The present invention relates to a semiconductor laser device capable of reliably suppressing degradation of an end face due to interface oxidation and distortion application, and to a manufacturing method of the same.The semiconductor laser device has a laser structure portion 107 having opposite resonator faces 108 and 109, and protecting films 110 and 120 formed on at least one of the opposite resonator end faces, wherein the protecting films 110 and 120 are formed of nitride dielectric films having a multistage structure including amorphous layers 111 and 121 and polycrystal layers 112 and 122 in crystal structure, respectively, from aside in contact with the resonator faces.

摘要翻译： 本发明涉及能够可靠地抑制由于界面氧化和变形应用引起的端面劣化的半导体激光器件及其制造方法。 半导体激光装置具有激光结构部分107，其具有相对的谐振器面108和109以及形成在至少一个相对的谐振器端面上的保护膜110和120，其中保护膜110和120由氮化物绝缘膜形成， 包括晶体结构中的非晶层111和121以及分别与谐振器面接触的多晶层112和122的多级结构。

公开(公告)号：US20140345680A1

公开(公告)日：2014-11-27

申请号：US14345001

申请日：2012-09-03

申请人： Hiroshi Yoshida ,  Masao Ikeda ,  Shiro Uchida ,  Takashi Tange ,  Masaru Kuramoto ,  Masayuki Arimochi ,  Hui Yang ,  Shulong Lu ,  Xinhe Zheng

发明人： Hiroshi Yoshida ,  Masao Ikeda ,  Shiro Uchida ,  Takashi Tange ,  Masaru Kuramoto ,  Masayuki Arimochi ,  Hui Yang ,  Shulong Lu ,  Xinhe Zheng

IPC分类号： H01L31/0687 ,  H01L31/0304

CPC分类号： H01L31/0687 ,  H01L31/03046 ,  H01L31/0352 ,  H01L31/06875 ,  Y02E10/544

摘要： A multi-junction solar cell that is lattice-matched with a base, and that includes a sub-cell having a desirable band gap is provided. A plurality of sub-cells are laminated, each including first and second compound semiconductor layers. At least one predetermined sub-cell is configured of first layers and a second layer. In each of the first layers, a 1-A layer and a 1-B layer are laminated. In the second layer, a 2-A layer and a 2-B layer are laminated. A composition A of the 1-A layer and the 2-A layer is determined based on a value of a band gap of the predetermined sub-cell. A composition B of the 1-B layer and the 2-B layer is determined based on a difference between a base lattice constant of the base and a lattice constant of the composition A. Thicknesses of 1-B layer and 2-B layer are determined based on difference between base lattice constant and a lattice constant of composition B, and on thickness of the 1-A layer and thickness of 2-A layer.

摘要翻译： 提供了与基底晶格匹配并且包括具有期望带隙的子单元的多结太阳能电池。 层叠多个子单元，每个子单元包括第一和第二化合物半导体层。 至少一个预定子单元由第一层和第二层构成。 在每个第一层中，层叠1-A层和1-B层。 在第二层中，层叠2-A层和2-B层。 基于预定子单元的带隙的值确定1-A层和2-A层的组成A. 基于碱的基本晶格常数与组成A的晶格常数之间的差异确定1-B层和2-B层的组合物B. 1-B层和2-B层的厚度为 基于晶格常数和组成B的晶格常数之间的差异以及1-A层的厚度和2-A层的厚度确定。

公开(公告)号：US09905719B2

公开(公告)日：2018-02-27

申请号：US14345001

申请日：2012-09-03

申请人： Hiroshi Yoshida ,  Masao Ikeda ,  Shiro Uchida ,  Takashi Tange ,  Masaru Kuramoto ,  Masayuki Arimochi ,  Hui Yang ,  Shulong Lu ,  Xinhe Zheng

发明人： Hiroshi Yoshida ,  Masao Ikeda ,  Shiro Uchida ,  Takashi Tange ,  Masaru Kuramoto ,  Masayuki Arimochi ,  Hui Yang ,  Shulong Lu ,  Xinhe Zheng

IPC分类号： H01L31/0687 ,  H01L31/0352 ,  H01L31/0304

CPC分类号： H01L31/0687 ,  H01L31/03046 ,  H01L31/0352 ,  H01L31/06875 ,  Y02E10/544

摘要： A multi-junction solar cell that is lattice-matched with a base, and that includes a sub-cell having a desirable band gap is provided. A plurality of sub-cells are laminated, each including first and second compound semiconductor layers. At least one predetermined sub-cell is configured of first layers and a second layer. In each of the first layers, a 1-A layer and a 1-B layer are laminated. In the second layer, a 2-A layer and a 2-B layer are laminated. A composition A of the 1-A layer and the 2-A layer is determined based on a value of a band gap of the predetermined sub-cell. A composition B of the 1-B layer and the 2-B layer is determined based on a difference between a base lattice constant of the base and a lattice constant of the composition A. Thicknesses of 1-B layer and 2-B layer are determined based on difference between base lattice constant and a lattice constant of composition B, and on thickness of the 1-A layer and thickness of 2-A layer.