公开(公告)号：US12125940B2

公开(公告)日：2024-10-22

申请号：US17372992

申请日：2021-07-12

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Alexander Dobrinsky

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/04 ,  H01L33/10 ,  H01L33/12 ,  H01L33/32 ,  H01L33/36 ,  H01L33/62

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/12 ,  H01L33/32 ,  H01L33/36 ,  H01L33/62 ,  H01L33/04 ,  H01L33/10

Abstract: A semiconductor heterostructure for an optoelectronic device with improved light emission is disclosed. The heterostructure can include a first semiconductor layer having a first index of refraction n1. A second semiconductor layer can be located over the first semiconductor layer. The second semiconductor layer can include a laminate of semiconductor sublayers having an effective index of refraction n2. A third semiconductor layer having a third index of refraction n3 can be located over the second semiconductor layer. The first index of refraction n1 is greater than the second index of refraction n2, which is greater than the third index of refraction n3.

公开(公告)号：US12101956B2

公开(公告)日：2024-09-24

申请号：US18140568

申请日：2023-04-27

Applicant: Samsung Display Co., Ltd.

Inventor： Youn Hwan Jung ,  Kyu Han Bae ,  Jae Lok Cha ,  Kang Yong Lee

IPC: H10K50/842 ,  H01L33/12 ,  H01L33/44 ,  H01L33/48 ,  H01L33/64 ,  H10K50/84 ,  H10K50/87 ,  H10K59/40 ,  H10K59/80 ,  H10K77/10 ,  H10K102/00

CPC classification number: H10K50/8426 ,  H10K50/84 ,  H10K50/87 ,  H10K59/40 ,  H01L33/12 ,  H01L33/44 ,  H01L33/48 ,  H01L33/483 ,  H01L33/64 ,  H10K59/8722 ,  H10K77/111 ,  H10K2102/311

Abstract: Provided is a display device, comprising a display panel which comprises a first area and a second area located around the first area; and an under-panel sheet which is located under the display panel and overlaps the first area and the second area, wherein the under-panel sheet comprises a buffer member and a strength reinforcing member, wherein the strength reinforcing member is thinner than the buffer member, and a ratio of a thickness of the buffer member to a thickness of the strength reinforcing member is 3 to 6 times.

公开(公告)号：US12080831B2

公开(公告)日：2024-09-03

申请号：US18212449

申请日：2023-06-21

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Wen-Hung Chuang ,  Tzu-Yao Tseng ,  Cheng-Lin Lu

IPC: H01L33/40 ,  F21K9/23 ,  F21K9/232 ,  F21K9/69 ,  F21Y115/10 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L33/405 ,  H01L33/22 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  F21K9/23 ,  F21K9/232 ,  F21K9/69 ,  F21Y2115/10 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer includes a first edge; a reflective structure located on the second semiconductor layer and including an outer edge; a first electrode pad located on the reflective structure, wherein the first electrode pad including an outer side wall adjacent to the outer edge, wherein the outer edge extends beyond the outer side wall and does not exceed the first edge in a cross-sectional view of the light-emitting device.

公开(公告)号：US20240266467A1

公开(公告)日：2024-08-08

申请号：US18419235

申请日：2024-01-22

Applicant: Taiwan-Asia Semiconductor Corporation

Inventor： Kun-Te LIN ,  Yueh-Lin LEE ,  Ching-Yuan TSAI

IPC: H01L33/22 ,  H01L33/12 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L33/22 ,  H01L33/12 ,  H01L33/382 ,  H01L33/62

Abstract: A light-emitting diode structure includes a substrate, a semiconductor light-emitting structure, and an electrode. The semiconductor light-emitting structure is located on the substrate, and the semiconductor light-emitting structure includes a top surface and a plurality of side walls. A surface roughening area is formed on the top surface. The electrode is located on the top surface. The surface roughening area is located between the electrode and the plurality of side walls, and the top surface forms a first flat part between the surface roughening area and the plurality of side walls.

公开(公告)号：US20240234628A1

公开(公告)日：2024-07-11

申请号：US18224255

申请日：2023-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongchul SHIN ,  Joosung KIM ,  Younghwan PARK ,  Junhee CHOI

IPC: H01L33/12 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/12 ,  H01L33/06 ,  H01L33/32

Abstract: A nitride-based semiconductor light-emitting device, including a first semiconductor layer, wherein the first semiconductor layer is nitride-based and has a first conductivity type; a light-emitting layer provided on the first semiconductor layer, wherein the light-emitting layer may include a nitride-based semiconductor including Indium (In); a second semiconductor layer provided on the light-emitting layer, wherein the second semiconductor layer is nitride-based and has a second conductivity type; and a strain relaxation layer provided between the first semiconductor layer and the light-emitting layer, and including an AlGaN layer having a protrusion whose horizontal cross-section area decreases as the protrusion extends in a vertical direction from the second semiconductor layer to the first semiconductor layer.

公开(公告)号：US20240213403A1

公开(公告)日：2024-06-27

申请号：US18397702

申请日：2023-12-27

Applicant: EPISTAR CORPORATION

Inventor： Tien-Yu WANG ,  Yung-Hsiang LIN

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/20 ,  H01L33/48 ,  H01L33/60

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/20 ,  H01L33/486 ,  H01L33/60

Abstract: A semiconductor device includes a substrate having an upper surface, a buffer layer formed on the upper surface, and an element structure formed on the buffer layer. The substrate includes a plurality of holes extending from the upper surface of the substrate to an inside of the substrate and forming a plurality of openings at the upper surface of the substrate. In a cross-sectional view of the semiconductor device, at least two of the holes have different depths.

公开(公告)号：US11994269B2

公开(公告)日：2024-05-28

申请号：US18178856

申请日：2023-03-06

Applicant: SEOUL SEMICONDUCTOR CO., LTD.

Inventor： Chung Hoon Lee

IPC: F21V13/00 ,  F21V3/12 ,  F21V7/04 ,  F21V7/24 ,  F21V8/00 ,  F21V9/30 ,  F21V13/08 ,  G02F1/13357 ,  H01L25/075 ,  H01L33/50 ,  H01L33/60 ,  F21Y105/16 ,  F21Y115/10 ,  G02F1/1335 ,  H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46

CPC classification number: F21V13/08 ,  F21V3/12 ,  F21V7/04 ,  F21V7/24 ,  F21V9/30 ,  G02B6/0055 ,  G02B6/0073 ,  G02F1/133603 ,  G02F1/133605 ,  G02F1/133606 ,  H01L25/0753 ,  H01L33/505 ,  H01L33/60 ,  F21Y2105/16 ,  F21Y2115/10 ,  G02F1/133614 ,  H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/502

Abstract: The present invention relates to a backlight unit for use in a display device. The backlight unit includes a circuit board, at least one light-emitting diode chip mounted on the circuit board, a plurality of reflection members arranged on the upper part of the light-emitting diode chip, and a light diffusing member. The light diffusing member has an incident surface on which light enters and an emitting surface from which light is emitted. The light diffusing member is arranged on the upper part of the circuit board. The plurality of reflection members are stacked on each other and reflect a part of light emitted from the upper surface of the light-emitting diode chip.

公开(公告)号：US20240170606A1

公开(公告)日：2024-05-23

申请号：US17790829

申请日：2022-02-16

Applicant: FOCUS LIGHTINGS TECH CO., LTD.

Inventor： Guochang Li ,  Zhijun Xu ,  Han Jiang ,  Hu Cheng ,  Yangyang Xu ,  Wenjun Wang ,  Shuwei Yuan

IPC: H01L33/06 ,  H01L25/075 ,  H01L33/00 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L25/0753 ,  H01L33/007 ,  H01L33/12 ,  H01L33/145 ,  H01L33/325

Abstract: The present application relates to an LED epitaxial structure and the preparation method and application thereof. The LED epitaxial structure comprises a first multiple-quantum-well light-emitting layer and a second multiple-quantum-well light-emitting layer. The first multiple-quantum-well light-emitting layer comprises a first shoes layer, a first well layer, a first cap layer, and a first Barrier layer epitaxially grown from bottom to top in sequence. The second multiple-quantum-well light-emitting layer comprises a second shoes layer, a second well layer, a second cap layer, and a second Barrier layer epitaxially grown from bottom to top in sequence. The technical solutions disclosed in the present application can solve the problem that the 365 nm to 375 nm wave band LED would emit yellow light.

公开(公告)号：US11984530B2

公开(公告)日：2024-05-14

申请号：US17235729

申请日：2021-04-20

Applicant: CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE CO., LTD.

Inventor： Ching-Chung Chen

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: A light emitting diode (LED) structure includes a substrate, a first type semiconductor layer, a second type semiconductor layer, and a multi-quantum well light-emitting layer. The first type semiconductor layer is disposed on the substrate and has a patterned structure layer on a surface of the first type semiconductor layer away from the substrate. The multi-quantum well light-emitting layer is sandwiched between the patterned structure layer and the second type semiconductor layer and covers the patterned structure layer. The multi-quantum well light-emitting layer has multiple first thickness regions, multiple second thickness regions, and multiple transition regions. The first thickness region has a thickness greater than the second thickness region in a vertical direction from the first type semiconductor layer to the second type semiconductor layer. The transition region has a thickness that gradually decreases in a direction from the first thickness regions to the second thickness region.

公开(公告)号：US20240113256A1

公开(公告)日：2024-04-04

申请号：US18475970

申请日：2023-09-27

Applicant: ALLOS Semiconductors GmbH

Inventor： Atsushi NISHIKAWA ,  Alexander LÖSING

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32 ,  H01L29/7786

Abstract: A GaN-on-Si epiwafer forming a layer stack is described. The epiwafer including a substrate, a strain-decoupling layer including a surface recovery layer and a self-organized template layer arranged directly on the substrate, the self-organized template layer comprising pits, and comprising GaN, the surface recovery layer having a substantially smooth surface, and a strain-engineering sub-stack arranged on the self-organized template layer and comprising at least one GaN layer and at least one AlxGa1−xN intermediate layer.