公开(公告)号：US06504164B2

公开(公告)日：2003-01-07

申请号：US09740662

申请日：2000-12-19

申请人： Akira Yonezawa ,  Seiji Morita ,  Mitsuyoshi Satou

发明人： Akira Yonezawa ,  Seiji Morita ,  Mitsuyoshi Satou

IPC分类号： H01J3728

CPC分类号： H01J37/28 ,  H01J37/141

摘要： The invention is to observe semiconductor wafers with higher resolution at a low acceleration voltage—in particular, achieving such high-resolution observability when a wafer is inclined or tilted at large angles. A composite lens is used which consists essentially of a single-pole or monopole magnetic field type lens and an electrostatic field invasive lens whereas an electrode of the electrostatic field invasive lens which opposes the wafer is made of a magnetic material while letting a high voltage of the negative polarity be applied to this electrode and the wafer. Even when the wafer is tilted, any astigmatism and axis failure will hardly occur.

摘要翻译： 本发明是在低加速电压下观察具有更高分辨率的半导体晶片，特别是当晶片以大角度倾斜或倾斜时获得这种高分辨率可观察性。 使用复合透镜，其基本上由单极或单极磁场型透镜和静电场侵入透镜组成，而与晶片相对的静电场侵入透镜的电极由磁性材料制成，同时使高 对该电极和晶片施加负极性。 即使当晶片倾斜时，几乎不会发生任何散光和轴故障。