公开(公告)号：US06768114B2

公开(公告)日：2004-07-27

申请号：US10410133

申请日：2003-04-10

Applicant: Shigenori Takagi

Inventor： Shigenori Takagi

IPC: H01J3728

CPC classification number: H01J37/222 ,  G01N23/2251

Abstract: In an electron microscope, at least the characteristics of the specimen is set on a first image observation mode screen as an image observation condition. An observation image of the specimen is displayed on a first display section based on a condition set on the first image observation mode screen. Observation images of the specimen are displayed on a second display section as one or more secondary electron images or one or more reflection electron images under at least two types of image observation conditions based on the condition set on the first image observation mode screen. Any desired observation image is selected from among the observation images displayed on the second display section.

Abstract translation: 在电子显微镜中，至少将样本的特性设定在作为图像观察条件的第一图像观察模式画面上。 基于在第一图像观察模式屏幕上设置的条件，将样本的观察图像显示在第一显示部分上。 基于在第一图像观察模式屏幕上设置的条件，将样本的观察图像作为一个或多个二次电子图像或至少两种图像观察条件下的一个或多个反射电子图像显示在第二显示部分上。 从显示在第二显示部分上的观察图像中选择任何所需的观察图像。

公开(公告)号：US06730906B2

公开(公告)日：2004-05-04

申请号：US09977549

申请日：2001-10-15

Applicant: Matthias Brunner ,  Ralf Schmid

Inventor： Matthias Brunner ,  Ralf Schmid

IPC: H01J3728

CPC classification number: H01J37/244 ,  H01J37/28

Abstract: A method and apparatus for testing a substrate, wherein a particle beam is directed onto the substrate and emitted secondary particles are detected with a detector and then evaluated. The location of the site at which the secondary particles are emitted on the substrate relative to the position of the detector is taken into consideration during testing.

Abstract translation: 一种用于测试衬底的方法和装置，其中将粒子束引导到衬底上，并且用检测器检测发射的次级颗粒，然后进行评估。 在测试期间考虑相对于检测器的位置在基底上发射次级粒子的位置的位置。

公开(公告)号：US06667476B2

公开(公告)日：2003-12-23

申请号：US09486042

申请日：2000-02-17

Applicant: Hideo Todokoro ,  Shou Takami ,  Makoto Ezumi ,  Osamu Yamada ,  Yoichi Ose ,  Tomohiro Kudo

Inventor： Hideo Todokoro ,  Shou Takami ,  Makoto Ezumi ,  Osamu Yamada ,  Yoichi Ose ,  Tomohiro Kudo

IPC: H01J3728

CPC classification number: H01J37/244 ,  H01J37/28 ,  H01J2237/0475 ,  H01J2237/04756

Abstract: The present invention relates to a scanning electron microscope employing a deceleration field forming technology (retarding), more particularly a scanning electron microscope which separates and detects secondary electrons at high efficiency. The object of the present invention is accomplished by providing an electron source, a lens for condensing the primary electron beam which is emitted from said electron source, a detector for detecting electrons which are generated by radiation of the primary electron beam onto a specimen, a first deceleration means for decelerating the primary electron beam which is radiated onto said specimen, a second deceleration means for decelerating electrons which are generated on the specimen, and a deflector for deflecting said electrons which are decelerated by said second decelerating means.

Abstract translation: 本发明涉及一种使用减速场形成技术（延迟）的扫描电子显微镜，更具体地说，涉及一种以高效率分离和检测二次电子的扫描电子显微镜。 本发明的目的是通过提供电子源，用于冷凝从所述电子源发射的一次电子束的透镜，用于检测通过将一次电子束辐射到样本上产生的电子的检测器， 第一减速装置，用于使被辐射到所述样本上的一次电子束减速，用于减速在所述样本上产生的电子的第二减速装置，以及用于使由所述第二减速装置减速的所述电子偏转的偏转器。

公开(公告)号：US06509564B1

公开(公告)日：2003-01-21

申请号：US09292626

申请日：1999-04-15

Applicant: Hiroyuki Suzuki ,  Hiroyuki Shinada ,  Atsuko Takafuji ,  Yasutsugu Usami ,  Shuji Sugiyama

Inventor： Hiroyuki Suzuki ,  Hiroyuki Shinada ,  Atsuko Takafuji ,  Yasutsugu Usami ,  Shuji Sugiyama

IPC: H01J3728

CPC classification number: H01J37/28 ,  H01J2237/082 ,  H01J2237/2826

Abstract: The present invention is intended to highly fast, stably acquire highly accurate images from irradiated positions with an electron beam on a circuit pattern in the step of fabricating a semiconductor device including an insulating material or a mixture of an insulating material and a conductive material, without occurrence of any deviation in the irradiated position in the images to be comparatively inspected, automatically comparing the images with each other thereby inspecting defects of the circuit pattern without occurrence of errors, and feeding back the result to the conditions of fabricating the semiconductor device thereby increasing the reliability of the semiconductor device and reducing the defective percentage thereof. The dependence of the surface height of a workpiece on the corrected amount of deflection at a central portion of a workpiece stage is compared with that at the outer peripheral portion of the workpiece, to obtain a distortion amount inherent to the outer peripheral portion of the workpiece. The distortion amount is eliminated from an outer peripheral standard mark signal, to calculate the dependence of the height on the corrected amount of deflection at the outer peripheral portion, thereby obtaining the deflection correcting amount at the outer peripheral portion equivalent to that obtained at the central portion. Since a suitable deflection correcting table can be prepared only by using the outer peripheral standard mark, the deflection correcting table can be updated by repeating desired times calculation of the corrected amount of deflection at the outer peripheral portion while a wafer is left mounted. As a result, the deflection correcting table including the dependence of the surface height, which table is capable of keeping up with the drift of the electron beam or the like, can be accurately obtained without reducing the throughput.

公开(公告)号：US06489612B1

公开(公告)日：2002-12-03

申请号：US09701606

申请日：2001-01-30

Applicant: Toshio Kodama ,  Yasuhiko Sugiyama ,  Toshiaki Fujii

Inventor： Toshio Kodama ,  Yasuhiko Sugiyama ,  Toshiaki Fujii

IPC: H01J3728

CPC classification number: G01N23/2258 ,  G01B15/02 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/2814 ,  H01J2237/30466

Abstract: A thin film is etched by irradiating charged particles to a surface of the thin film. An etching time of the thin film is measured by observing a change in intensity of secondary charged particles emitted by etched portions of the thin film. A thickness of the thin film is calculated in accordance with the measured etching time.

Abstract translation: 通过将带电粒子照射到薄膜的表面来蚀刻薄膜。 通过观察由薄膜的蚀刻部分发射的二次带电粒子的强度变化来测量薄膜的蚀刻时间。 根据测量的蚀刻时间计算薄膜的厚度。

公开(公告)号：US06787772B2

公开(公告)日：2004-09-07

申请号：US09768356

申请日：2001-01-25

Applicant: Yoichi Ose ,  Hideo Todokoro ,  Makoto Ezumi ,  Mitsugu Sato

Inventor： Yoichi Ose ,  Hideo Todokoro ,  Makoto Ezumi ,  Mitsugu Sato

IPC: H01J3728

CPC classification number: H01J37/147 ,  H01J37/1471 ,  H01J37/153 ,  H01J37/28 ,  H01J2237/12 ,  H01J2237/14 ,  H01J2237/1516 ,  H01J2237/244 ,  H01J2237/2817

Abstract: The present invention is intended to prevent the deterioration of resolution due to increase in off-axis aberration resulting from the deviation of a primary electron bean from the optical axis of a scanning electron microscope. A scanning electron microscope is provided with an image shifting deflector system including two deflectors disposed respectively at upper and lower stages. The deflector disposed at the lower stage is a multipole electrostatic deflecting electrode and is disposed in an objective. Even if the distance of image shifting is great, an image of a high resolution can be formed and dimensions can be measured in a high accuracy. The SEM is able to achieving precision inspection at a high throughput when applied to inspection in semiconductor device fabricating processes that process a wafer having a large area and provided with very minute circuit elements.

公开(公告)号：US06720557B2

公开(公告)日：2004-04-13

申请号：US09825257

申请日：2001-04-03

Applicant: Jurgen Frosien

Inventor： Jurgen Frosien

IPC: H01J3728

CPC classification number: H01J37/244 ,  H01J2237/2448 ,  H01J2237/2449

Abstract: A particle beam apparatus includes a source for providing a primary particle beam along a primary beam axis, an objective lens for focussing the primary particle beam onto a specimen so as to release particles therefrom, and a detection system for image generation. The objective lens includes an immersion lens for decelerating the primary particle. The detection system includes a converter with a conversion area to convert the released accelerated particles into secondary particles, an electrode for influencing the converted secondary particles and at least one detector for detecting the converted secondary particles. The detection system is arranged in front of the immersion lens. The converter and the electrode control the converted secondary particles so as to prevent the converted secondary particles released at a specific part of the conversion area from reaching the detector.

Abstract translation: 粒子束装置包括用于沿主光束轴提供初级粒子束的源，用于将一次粒子束聚焦到样本上以便从其上释放颗粒的物镜，以及用于图像生成的检测系统。 物镜包括用于使一次粒子减速的浸没透镜。 检测系统包括具有转换区域以将释放的加速颗粒转化为二次颗粒的转换器，用于影响转化的二次颗粒的电极和用于检测转化的二次颗粒的至少一个检测器。 检测系统布置在浸没透镜的前面。 转换器和电极控制转换的二次粒子，以防止在转换区域的特定部分释放的转换的二次粒子到达检测器。

公开(公告)号：US06479819B1

公开(公告)日：2002-11-12

申请号：US09505280

申请日：2000-02-16

Applicant: Muneki Hamashima ,  Yoichi Watanabe ,  Yoshiaki Kohama

Inventor： Muneki Hamashima ,  Yoichi Watanabe ,  Yoshiaki Kohama

IPC: H01J3728

CPC classification number: H01J37/265 ,  G01N23/225 ,  H01J37/244 ,  H01J37/28 ,  H01J37/292 ,  H01J2237/2446 ,  H01J2237/2817

Abstract: This invention relates to an object observation apparatus and observation method. The object observation apparatus is characterized by including a drivable stage on which a sample is placed, an irradiation optical system which is arranged to face the sample on the stage, and emits an electron beam as a secondary beam, an electron detection device which is arranged to face the sample, causes to project, as a primary beam, at least one of a secondary electron, reflected electron, and back-scattering electron generated by the sample upon irradiation of the electron beam, and generates image information of the sample, a stage driving device which is adjacent to the stage to drive the stage, and a deflector arranged between the sample and the electron detection device to deflect the secondary beam, the electron detection device having a converter arranged on a detection surface to convert the secondary beam into light, an array image sensing unit which is adjacent to the converter, has pixels of a plurality of lines each including a plurality of pixels on the detection surface, sequentially transfers charges of pixels of each line generated upon reception of light of an optical image obtained via the converter to corresponding pixels of an adjacent line at a predetermined timing, adds, every transfer, charges generated upon reception of light after the transfer at the pixels which received the charges, and sequentially outputs charges added up to a line corresponding to an end, and a control unit connected to the array image sensing unit to output a transfer signal for sequentially transferring charges of pixels of each line to an adjacent line, and the control unit having a stage scanning mode in which the array image sensing unit is controlled in accordance with a variation in projection position of the secondary beam projected on the electron detection device that is generated by movement of the stage device, and a deflector operation mode in which the array image sensing unit is controlled in accordance with a variation in projection position of the secondary beam projected on the detection device by the deflector.

公开(公告)号：US06420702B1

公开(公告)日：2002-07-16

申请号：US09611641

申请日：2000-07-07

Applicant: Nicholas H. Tripsas ,  Bhanwar Singh ,  Michael K. Templeton

Inventor： Nicholas H. Tripsas ,  Bhanwar Singh ,  Michael K. Templeton

IPC: H01J3728

CPC classification number: H01J37/28 ,  G01B15/00 ,  H01J2237/2814

Abstract: An SEM measurement standard for measuring linewidths of 0.1 microns and below utilizes two different conducting materials in order to prevent charging effects. The top material is selected to use grain morphology to focus secondary electrons, and to obtain improved image contrast. The inventive standard is comprised of materials which are commonly used in semiconductor manufacturing and which do not cause contamination of fabrication facilities.

Abstract translation: 用于测量0.1微米及以下线宽的SEM测量标准使用两种不同的导电材料，以防止充电效应。 选择顶部材料以使用晶粒形态来聚焦二次电子，并获得改善的图像对比度。 本发明的标准由通常用于半导体制造并且不会引起制造设备污染的材料组成。

公开(公告)号：US06399953B1

公开(公告)日：2002-06-04

申请号：US09227231

申请日：1999-01-08

Applicant: Tadashi Kitamura

Inventor： Tadashi Kitamura

IPC: H01J3728

CPC classification number: H01J37/28 ,  H01J2237/2817

Abstract: A method for automatically recognizing a stage position of a feature of a semiconductor wafer comprises the steps of identifying a feature of a semiconductor wafer disposed at a predetermined distance from an alignment mark on the semiconductor wafer and obtaining an electron beam image, an optical image or a differential image thereof of the feature of the semiconductor wafer. A normalized correlation coefficient from the image of the feature is then calculated, and a stage position of the feature of the semiconductor wafer is automatically recognized in accordance with the normalized correlation coefficient.

Abstract translation: 用于自动识别半导体晶片的特征的台位置的方法包括以下步骤：识别设置在半导体晶片上的对准标记预定距离处的半导体晶片的特征，并获得电子束图像，光学图像或 其半导体晶片的特征的差分图像。 然后计算来自特征图像的归一化相关系数，并且根据归一化相关系数自动识别半导体晶片的特征的阶段位置。