公开(公告)号：US20090289668A1

公开(公告)日：2009-11-26

申请号：US12153792

申请日：2008-05-23

申请人： Alberto Baldisserotto ,  Steven Broome ,  Jason Thurston ,  Carl Thomas Gray

发明人： Alberto Baldisserotto ,  Steven Broome ,  Jason Thurston ,  Carl Thomas Gray

IPC分类号： H03K3/00

CPC分类号： H03K19/018528 ,  H03K19/09432

摘要： An integrated circuit 2 is provided with an output driver circuit 12. The output driver circuit 12 one side provides between a first power supply 20 and a second power supply 18 a first transistor 16, a first output 22, a first resistor 14 and, connected in parallel with the first resistor 14, a first bypass transistor 24. The first bypass transistor 24 is controlled by a first bypass control voltage vbp such that as the first output voltage of the first output 22 approaches the second power supply voltage of the second power supply 18, the first bypass transistor 24 serves to bypass the first resistor 14 and provide a single-ended impedance of the output driver circuit 12 which approximates to zero. On the complementary side of the output driver circuit 12 there are similarly provided a second transistor 28, a second resistor 26 and a bypass transistor 32.

摘要翻译： 集成电路2设置有输出驱动器电路12.输出驱动器电路12一侧提供第一电源20和第二电源18之间的第一晶体管16，第一输出22，第一电阻14和连接 与第一电阻器14并联，第一旁路晶体管24.第一旁路晶体管24由第一旁路控制电压vbp控制，使得当第一输出端22的第一输出电压接近第二电源的第二电源电压时 电源18，第一旁路晶体管24用于旁路第一电阻器14，并提供近似为零的输出驱动器电路12的单端阻抗。 在输出驱动器电路12的互补侧，类似地提供第二晶体管28，第二电阻26和旁路晶体管32。

公开(公告)号：US20090290272A1

公开(公告)日：2009-11-26

申请号：US12153802

申请日：2008-05-23

申请人： Steven Broome ,  Jason Thurston

发明人： Steven Broome ,  Jason Thurston

IPC分类号： H02H9/00

CPC分类号： H02H9/046

摘要： An integrated circuit 2 is provided with a clamp transistor 20 for providing electrostatic discharge event protection. A detector circuit 28 produces a clamp control signal for switching the clamp transistor 20 to a conductive state so as to provide the electrostatic discharge protection. The detector circuit 28 also generates an electrostatic discharge event signal 36 which is distributed elsewhere within the integrated circuit 2 and controls a protection circuit element 60, 64, 44 to force a processing control signal 40, 52 of a signal processing transistor 38, 54 into a state in which the signal processing transistor 38, 54 is more resistant to electrostatic discharge damage. The signal processing transistors 38, 54 may be P-type field effect transistors associated with a receiver 14 or a transmitter 12 connected to an external signal communication line. The use of this active protection controlled by the electrostatic discharge event signal 36 permits smaller protection diodes 22, 24 to be use with such communication signal lines and/or provide for increased electrostatic discharge protection.

摘要翻译： 集成电路2设置有用于提供静电放电事件保护的钳位晶体管20。 检测器电路28产生用于将钳位晶体管20切换到导通状态的钳位控制信号，以提供静电放电保护。 检测器电路28还产生静电放电事件信号36，该静电放电事件信号36分布在集成电路2内的其他地方，并且控制保护电路元件60,64,44以迫使信号处理晶体管38,54的处理控制信号40,42进入 信号处理晶体管38,54更能抵抗静电放电损坏的状态。 信号处理晶体管38,54可以是与连接到外部信号通信线路的接收器14或发送器12相关联的P型场效应晶体管。 使用由静电放电事件信号36控制的该有源保护允许较小的保护二极管22,24与这种通信信号线一起使用和/或提供增加的静电放电保护。