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    System and method for laser temperature compensation
    1.
    发明授权
    System and method for laser temperature compensation 失效

    公开(公告)号：US07443894B2

    公开(公告)日：2008-10-28

    申请号：US11788639

    申请日：2007-04-20

    申请人： Alfred Riddle ,  John Havard

    发明人： Alfred Riddle ,  John Havard

    IPC分类号： H01S3/13 ,  H01S3/00 ,  H01S3/04

    CPC分类号： H01S5/024 ,  H01S5/02415 ,  H01S5/06808

    摘要： A method for compensating for changes in output power or wavelength of an optical source with temperature. Many optical sources have power and/or wavelength variations with temperature which can be compensated by open- or closed-loop methods if a method of accurately measuring the optical source temperature is available. The voltage across a semiconductor junction varies with temperature. Measuring the optical source power or wavelength variation with temperature and tracking the voltage across the semiconductor junction provides a means for compensating an instrument for temperature induced optical output power or wavelength variations. An important field of application is optical density or turbidity measurements in cellular media.

    System and method for laser temperature compensation
    2.
    发明申请
    System and method for laser temperature compensation 失效
    激光温度补偿系统和方法

    公开(公告)号：US20080130695A1

    公开(公告)日：2008-06-05

    申请号：US11788639

    申请日：2007-04-20

    申请人： Alfred Riddle ,  John Havard

    发明人： Alfred Riddle ,  John Havard

    IPC分类号： H01J7/00 ,  H01S3/00

    CPC分类号： H01S5/024 ,  H01S5/02415 ,  H01S5/06808

    摘要： A method for compensating for changes in output power or wavelength of an optical source with temperature. Many optical sources have power and/or wavelength variations with temperature which can be compensated by open- or closed-loop methods if a method of accurately measuring the optical source temperature is available. The voltage across a semiconductor junction varies with temperature. Measuring the optical source power or wavelength variation with temperature and tracking the voltage across the semiconductor junction provides a means for compensating an instrument for temperature induced optical output power or wavelength variations. An important field of application is optical density or turbidity measurements in cellular media.

    摘要翻译： 一种利用温度补偿光源的输出功率或波长变化的方法。 许多光源具有随温度的功率和/或波长变化，如果可以准确测量光源温度的方法可以通过开环或闭环方法来补偿。 半导体结上的电压随温度而变化。 通过温度测量光源功率或波长变化并跟踪跨越半导体结的电压，为温度感应光输出功率或波长变化补偿仪器提供了一种手段。 一个重要的应用领域是细胞培养基中的光密度或浊度测量。

    Systems and methods for in situ spectroscopic measurements
    3.
    发明申请
    Systems and methods for in situ spectroscopic measurements 有权
    用于原位光谱测量的系统和方法

    公开(公告)号：US20050264817A1

    公开(公告)日：2005-12-01

    申请号：US11139720

    申请日：2005-05-27

    申请人： John Havard ,  Paul Williams

    发明人： John Havard ,  Paul Williams

    IPC分类号： G01N21/00 ,  G01N21/53 ,  G01N21/64 ,  G01N21/85

    CPC分类号： G01N21/6486 ,  G01N21/0303 ,  G01N21/532 ,  G01N21/645 ,  G01N21/8507

    摘要： A circularizated semiconductor laser diode (CSLD), such as for example a vertical cavity surface emitting laser (VCSEL) may be used for optical measurements. The CSLD may be used in a cell density probe to perform cell density determination and/or turbidity determination, such as in a biotech, fermentation, or other optical absorbance application. The cell density probe may comprise a probe tip section made from a polytetrafluoroethylene material, which provides sealability, ease of manufacture, durability, cleanability, optical semi-transparency at visible and near infrared wavelengths, and other advantages. The probe tip advantageously provides an optical gap that allows for in situ measurements of optical measurements including but not limited to absorbance, scattering, and fluorescence.

    摘要翻译： 可以使用圆形化的半导体激光二极管（CSLD），例如垂直腔表面发射激光器（VCSEL），用于光学测量。 CSLD可以用于细胞密度探针中以进行细胞密度测定和/或浊度测定，例如在生物技术，发酵或其它光吸收应用中。 细胞密度探针可以包括由聚四氟乙烯材料制成的探针尖端部分，其提供可密封性，易于制造，耐久性，可清洁性，可见光和近红外波长处的光学半透明度等优点。 探针尖端有利地提供光学间隙，其允许光学测量的原位测量，包括但不限于吸光度，散射和荧光。