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    THIN FILM TRANSISTOR AND ACTIVE MATRIX DISPLAY
    3.
    发明申请
    THIN FILM TRANSISTOR AND ACTIVE MATRIX DISPLAY 审中-公开
    薄膜晶体管和有源矩阵显示

    公开(公告)号：US20110012125A1

    公开(公告)日：2011-01-20

    申请号：US12933450

    申请日：2009-04-20

    申请人： Gareth Nicholas ,  Benjamin James Hadwen ,  Sunay Shah

    发明人： Gareth Nicholas ,  Benjamin James Hadwen ,  Sunay Shah

    IPC分类号： H01L33/00 ,  H01L29/786

    CPC分类号： H01L29/78609 ,  G02F2201/58 ,  H01L29/78615

    摘要： A thin film transistor is formed in a semiconductor island on an insulating substrate. The transistor comprises a source (1502) and a drain (1504) of first conductivity type and a channel (1508) of a second opposite conductivity type. The channel is overlapped by one or more insulated gates (1510) and is provided with isolation diodes. Each isolation diode comprises a first region (1506) which is lightly doped and a second region (1512) which is heavily doped and of the second conductivity type. The diodes are not overlapped by the gate (1510). The first and second regions (1506, 1512) extend away from the channel (1508) by less than the length of the adjacent source or drain. The lightly doped region (1506) extends away from the source or drain and the heavily doped region (1512) extends away from the lightly doped region such that the first and second regions (1506, 1512) form a p-n junction with the adjacent source or drain in a direction orthogonal to the main conduction path of the transistor but not parallel to the main conduction path.

    摘要翻译： 薄膜晶体管形成在绝缘基板上的半导体岛中。 晶体管包括第一导电类型的源极（1502）和漏极（1504）和具有第二相反导电类型的沟道（1508）。 通道由一个或多个绝缘栅极（1510）重叠，并且设置有隔离二极管。 每个隔离二极管包括轻度掺杂的第一区域（1506）和重掺杂的第二导电类型的第二区域（1512）。 二极管不与栅极重叠（1510）。 第一和第二区域（1506,1512）远离通道（1508）延伸小于相邻源极或漏极的长度。 轻掺杂区域（1506）远离源极或漏极延伸，并且重掺杂区域（1512）远离轻掺杂区域延伸，使得第一和第二区域（1506,1512）与相邻源形成pn结，或 在与晶体管的主导通路正交的方向上漏极，但不平行于主导通路径。