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公开(公告)号:US10608168B2
公开(公告)日:2020-03-31
申请号:US15724576
申请日:2017-10-04
Applicant: Allegro MicroSystems, LLC
Inventor: Juan Manuel Cesaretti , Gerardo A. Monreal , Daniel Musciano
Abstract: A planar Hall effect element be formed upon or can include a P-type substrate. The planar Hall effect element can also include a Hall plate region. The Hall plate region can include a first portion of an N-type layer disposed over the P-type substrate. The first portion of the N-type layer can include a top surface distal from the P-type substrate, and a continuous N-type outer boundary intersecting the top surface of the Hall plate region. The planar Hail effect element can also include an isolation region having a continuous outer boundary and having a continuous inner boundary, the continuous inner boundary in contact with all of the outer boundary of the Hall plate region, the P-type substrate and the first portion of the N-type layer not forming a P/N junction.
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公开(公告)号:US20190103551A1
公开(公告)日:2019-04-04
申请号:US15724576
申请日:2017-10-04
Applicant: Allegro MicroSystems, LLC
Inventor: Juan Manuel Cesaretti , Gerardo A. Monreal , Daniel Musciano
IPC: H01L43/06
Abstract: A planar Hall effect element be formed upon or can include a the P-type substrate. The planar Hall effect element can also include a Hall plate region. The Hall plate region can include a first portion of an N-type layer disposed over the P-type substrate. The first portion of the N-type layer can include a top surface distal from the P-type substrate, and a continuous N-type outer boundary intersecting the top surface of the Hall plate region. The planar Hall effect element can also include an isolation region having a continuous outer boundary and having a continuous inner boundary, the continuous inner boundary in contact with all of the outer boundary of the Hall plate region, the P-type substrate and the first portion of the N-type layer not forming a P/N junction.
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