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1.发明申请DIRECT CONNECTED SILICON CONTROLLED RECTIFIER (SCR) HAVING INTERNAL TRIGGER 有权具有内部触发器的直接连接的硅控制整流器（SCR）公开(公告)号：US20150236011A1
公开(公告)日：2015-08-20
申请号：US14621766
申请日：2015-02-13
Applicant: Allegro Microsystems, LLC
Inventor： Zhixin Wang , Juin Jei Liou , Ruei-Cheng Sun
IPC: H01L27/02
CPC classification number: H01L27/0262 , H01L29/87
Abstract: In one aspect, a direct connected silicon control rectifier (DCSCR) includes a substrate having a semiconductor surface, a parasitic PNP bipolar transistor and a parasitic NPN bipolar transistor formed in the semiconductor surface. The parasitic PNP bipolar transistor includes a p+ emitter, an nbase and a pcollector and the parasitic NPN bipolar includes an n+ emitter, a pbase and an ncollector. The DCSCR also includes an electrically conductive line connecting an n+ contact to the nbase to a p+ contact to the pbase so that the nbase and the pbase are shorted.
Abstract translation: 一方面，直接连接的硅控制整流器（DCSCR）包括具有半导体表面的衬底，形成在半导体表面中的寄生PNP双极晶体管和寄生NPN双极晶体管。 寄生PNP双极晶体管包括一个p +发射极，一个n基极和一个集电极，而寄生的NPN双极包括一个n +发射极，一个p基极和一个集电极。 DCSCR还包括将n +触点与nbase连接到与pbase的p +触点的导电线，以使nbase和pbase短路。
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2.发明授权Direct connected silicon controlled rectifier (SCR) having internal trigger 有权直接连接的可控硅整流器（SCR）具有内部触发公开(公告)号：US09368486B2
公开(公告)日：2016-06-14
申请号：US14621766
申请日：2015-02-13
Applicant: Allegro Microsystems, LLC
Inventor： Zhixin Wang , Juin Jei Liou , Ruei-Cheng Sun
CPC classification number: H01L27/0262 , H01L29/87
Abstract: In one aspect, a direct connected silicon control rectifier (DCSCR) includes a substrate having a semiconductor surface, a parasitic PNP bipolar transistor and a parasitic NPN bipolar transistor formed in the semiconductor surface. The parasitic PNP bipolar transistor includes a p+ emitter, an nbase and a pcollector and the parasitic NPN bipolar includes an n+ emitter, a pbase and an ncollector. The DCSCR also includes an electrically conductive line connecting an n+ contact to the nbase to a p+ contact to the pbase so that the nbase and the pbase are shorted.
Abstract translation: 一方面，直接连接的硅控制整流器（DCSCR）包括具有半导体表面的衬底，形成在半导体表面中的寄生PNP双极晶体管和寄生NPN双极晶体管。 寄生PNP双极晶体管包括一个p +发射极，一个n基极和一个集电极，而寄生的NPN双极包括一个n +发射极，一个p基极和一个集电极。 DCSCR还包括将n +触点与nbase连接到与pbase的p +触点的导电线，以使nbase和pbase短路。
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