公开(公告)号：US20150236011A1

公开(公告)日：2015-08-20

申请号：US14621766

申请日：2015-02-13

Applicant: Allegro Microsystems, LLC

Inventor： Zhixin Wang ,  Juin Jei Liou ,  Ruei-Cheng Sun

IPC: H01L27/02

CPC classification number: H01L27/0262 ,  H01L29/87

Abstract: In one aspect, a direct connected silicon control rectifier (DCSCR) includes a substrate having a semiconductor surface, a parasitic PNP bipolar transistor and a parasitic NPN bipolar transistor formed in the semiconductor surface. The parasitic PNP bipolar transistor includes a p+ emitter, an nbase and a pcollector and the parasitic NPN bipolar includes an n+ emitter, a pbase and an ncollector. The DCSCR also includes an electrically conductive line connecting an n+ contact to the nbase to a p+ contact to the pbase so that the nbase and the pbase are shorted.

Abstract translation: 一方面，直接连接的硅控制整流器（DCSCR）包括具有半导体表面的衬底，形成在半导体表面中的寄生PNP双极晶体管和寄生NPN双极晶体管。 寄生PNP双极晶体管包括一个p +发射极，一个n基极和一个集电极，而寄生的NPN双极包括一个n +发射极，一个p基极和一个集电极。 DCSCR还包括将n +触点与nbase连接到与pbase的p +触点的导电线，以使nbase和pbase短路。

公开(公告)号：US09368486B2

公开(公告)日：2016-06-14

申请号：US14621766

申请日：2015-02-13

Applicant: Allegro Microsystems, LLC

Inventor： Zhixin Wang ,  Juin Jei Liou ,  Ruei-Cheng Sun

IPC: H01L29/66 ,  H01L27/02

CPC classification number: H01L27/0262 ,  H01L29/87

Abstract: In one aspect, a direct connected silicon control rectifier (DCSCR) includes a substrate having a semiconductor surface, a parasitic PNP bipolar transistor and a parasitic NPN bipolar transistor formed in the semiconductor surface. The parasitic PNP bipolar transistor includes a p+ emitter, an nbase and a pcollector and the parasitic NPN bipolar includes an n+ emitter, a pbase and an ncollector. The DCSCR also includes an electrically conductive line connecting an n+ contact to the nbase to a p+ contact to the pbase so that the nbase and the pbase are shorted.

Abstract translation: 一方面，直接连接的硅控制整流器（DCSCR）包括具有半导体表面的衬底，形成在半导体表面中的寄生PNP双极晶体管和寄生NPN双极晶体管。 寄生PNP双极晶体管包括一个p +发射极，一个n基极和一个集电极，而寄生的NPN双极包括一个n +发射极，一个p基极和一个集电极。 DCSCR还包括将n +触点与nbase连接到与pbase的p +触点的导电线，以使nbase和pbase短路。

公开(公告)号：US09318481B1

公开(公告)日：2016-04-19

申请号：US14847519

申请日：2015-09-08

Applicant: Allegro Microsystems, LLC

Inventor： Zhixin Wang ,  Juin Jei Liou ,  Wei Liang ,  Richard B. Cooper ,  Maxim Klebanov ,  Harianto Wong

IPC: H01L29/66 ,  H01L27/02 ,  H01L29/868

CPC classification number: H01L27/0262 ,  H01L27/0255 ,  H01L29/66121 ,  H01L29/87

Abstract: In one aspect, a silicon-controller rectifier (SCR) includes a first N+ region; a first P+ region; a second N+ region; a second P+ region; and a P+/Intrinsic/N+ (PIN) diode disposed between the first P+ region and the second N+ region. The PIN diode includes a third N+ region, a third P+ region and an intrinsic material disposed between the third N+ region and the third P+ region. An anode terminal of the SCR connects to the first N+ region and the first P+ region and a cathode terminal of the SCR connects to the second N+ region and the second P+ region. A first distance between the third N+ region and the third P+ region controls the trigger voltage of the SCR and a second distance corresponding to a length of each of the third P+ region and the third N+ region controls the holding voltage of the SCR.

Abstract translation: 一方面，硅控制器整流器（SCR）包括第一N +区域; 第一个P +区; 第二个N +区; 第二个P +区; 和设置在第一P +区和第二N +区之间的P + /本征/ N +（PIN）二极管。 PIN二极管包括第三N +区，第三P +区和设置在第三N +区和第三P +区之间的本征材料。 SCR的阳极端子连接到第一N +区域，SCR的第一P +区域和阴极端子连接到第二N +区域和第二P +区域。 第三N +区域和第三P +区域之间的第一距离控制SCR的触发电压，并且对应于第三P +区域和第三N +区域中的每一个的长度的第二距离控制SCR的保持电压。