专利检索 ap:("Amir Azordegan" OR "Gian Francesco Lorusso" OR "Ananthanarayanan Mohan" OR "Mark Neil" OR "Waiman Ng" OR "Srini Vedula") AND inv:"Srini Vedula" 第 1 页

1.

发明授权
Methods of stabilizing measurement of ArF resist in CD-SEM 有权
标题翻译：在CD-SEM中稳定测定ArF抗蚀剂的方法

公开(公告)号：US07015468B1

公开(公告)日：2006-03-21

申请号：US10807899

申请日：2004-03-24

申请人： Amir Azordegan , Gian Francesco Lorusso , Ananthanarayanan Mohan , Mark Neil , Waiman Ng , Srini Vedula

发明人： Amir Azordegan , Gian Francesco Lorusso , Ananthanarayanan Mohan , Mark Neil , Waiman Ng , Srini Vedula

IPC分类号： H01J37/26 , G01N23/225

CPC分类号： G03F7/70625 , H01J2237/2067 , H01J2237/2817

摘要： A method of improving stability for CD-SEM measurements of photoresist, in particular 193 nm photoresist, and of reducing shrinkage of 193 nm photoresist during CD-SEM measurements.The photoresist is exposed to a dose of electrons or other stabilizing beam prior to or during CD measurement. One embodiment of the invention includes multiplexing of the SEM electron beam.

摘要翻译： 提高光刻胶，特别是193nm光致抗蚀剂的CD-SEM测量的稳定性的方法，以及在CD-SEM测量期间减小193nm光致抗蚀剂的收缩的方法。在CD测量之前或期间，光致抗蚀剂暴露于一定量的电子或其他稳定光束。本发明的一个实施例包括SEM电子束的多路复用。