公开(公告)号：US20130230989A1

公开(公告)日：2013-09-05

申请号：US13411703

申请日：2012-03-05

申请人： An-Chi LIU ,  Chih-Wen Teng ,  Tzu-Yu Tseng ,  Chi-Heng Lin

发明人： An-Chi LIU ,  Chih-Wen Teng ,  Tzu-Yu Tseng ,  Chi-Heng Lin

IPC分类号： H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L29/7843 ,  H01L29/7848

摘要： A method for fabricating a semiconductor device is provided, wherein the method comprises steps as follows: A first conductive-type metal-oxide-semiconductor transistor and a second conductive-type metal-oxide-semiconductor transistor are firstly formed on a substrate. Subsequently, a first stress-inducing dielectric layer and a first capping layer are formed in sequence on the first conductive-type metal-oxide-semiconductor transistor; and then a second stress-inducing dielectric layer and a second capping layer are formed in sequence on the second conductive-type metal-oxide-semiconductor transistor. Next, the fist capping layer is removed.

摘要翻译： 提供一种制造半导体器件的方法，其中该方法包括以下步骤：首先在衬底上形成第一导电型金属氧化物半导体晶体管和第二导电型金属氧化物半导体晶体管。 随后，在第一导电型金属氧化物半导体晶体管上依次形成第一应力诱导电介质层和第一覆盖层; 然后在第二导电型金属氧化物半导体晶体管上依次形成第二应力诱导电介质层和第二覆盖层。 接下来，移除第一帽盖层。

公开(公告)号：US08835240B2

公开(公告)日：2014-09-16

申请号：US13411703

申请日：2012-03-05

申请人： An-Chi Liu ,  Chih-Wen Teng ,  Tzu-Yu Tseng ,  Chi-Heng Lin

发明人： An-Chi Liu ,  Chih-Wen Teng ,  Tzu-Yu Tseng ,  Chi-Heng Lin

IPC分类号： H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L29/7843 ,  H01L29/7848

摘要： A method for fabricating a semiconductor device is provided, wherein the method comprises steps as follows: A first conductive-type metal-oxide-semiconductor transistor and a second conductive-type metal-oxide-semiconductor transistor are firstly formed on a substrate. Subsequently, a first stress-inducing dielectric layer and a first capping layer are formed in sequence on the first conductive-type metal-oxide-semiconductor transistor; and then a second stress-inducing dielectric layer and a second capping layer are formed in sequence on the second conductive-type metal-oxide-semiconductor transistor. Next, the fist capping layer is removed.

摘要翻译： 提供一种制造半导体器件的方法，其中该方法包括以下步骤：首先在衬底上形成第一导电型金属氧化物半导体晶体管和第二导电型金属氧化物半导体晶体管。 随后，在第一导电型金属氧化物半导体晶体管上依次形成第一应力诱导电介质层和第一覆盖层; 然后在第二导电型金属氧化物半导体晶体管上依次形成第二应力诱导电介质层和第二覆盖层。 接下来，移除第一帽盖层。