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    Method for fabricating semiconductor device
    1.
    发明授权
    Method for fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08835240B2

    公开(公告)日：2014-09-16

    申请号：US13411703

    申请日：2012-03-05

    申请人： An-Chi Liu ,  Chih-Wen Teng ,  Tzu-Yu Tseng ,  Chi-Heng Lin

    发明人： An-Chi Liu ,  Chih-Wen Teng ,  Tzu-Yu Tseng ,  Chi-Heng Lin

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L29/7843 ,  H01L29/7848

    摘要： A method for fabricating a semiconductor device is provided, wherein the method comprises steps as follows: A first conductive-type metal-oxide-semiconductor transistor and a second conductive-type metal-oxide-semiconductor transistor are firstly formed on a substrate. Subsequently, a first stress-inducing dielectric layer and a first capping layer are formed in sequence on the first conductive-type metal-oxide-semiconductor transistor; and then a second stress-inducing dielectric layer and a second capping layer are formed in sequence on the second conductive-type metal-oxide-semiconductor transistor. Next, the fist capping layer is removed.

    摘要翻译： 提供一种制造半导体器件的方法，其中该方法包括以下步骤：首先在衬底上形成第一导电型金属氧化物半导体晶体管和第二导电型金属氧化物半导体晶体管。 随后，在第一导电型金属氧化物半导体晶体管上依次形成第一应力诱导电介质层和第一覆盖层; 然后在第二导电型金属氧化物半导体晶体管上依次形成第二应力诱导电介质层和第二覆盖层。 接下来，移除第一帽盖层。

    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    3.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20130230989A1

    公开(公告)日：2013-09-05

    申请号：US13411703

    申请日：2012-03-05

    申请人： An-Chi LIU ,  Chih-Wen Teng ,  Tzu-Yu Tseng ,  Chi-Heng Lin

    发明人： An-Chi LIU ,  Chih-Wen Teng ,  Tzu-Yu Tseng ,  Chi-Heng Lin

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L29/7843 ,  H01L29/7848

    摘要： A method for fabricating a semiconductor device is provided, wherein the method comprises steps as follows: A first conductive-type metal-oxide-semiconductor transistor and a second conductive-type metal-oxide-semiconductor transistor are firstly formed on a substrate. Subsequently, a first stress-inducing dielectric layer and a first capping layer are formed in sequence on the first conductive-type metal-oxide-semiconductor transistor; and then a second stress-inducing dielectric layer and a second capping layer are formed in sequence on the second conductive-type metal-oxide-semiconductor transistor. Next, the fist capping layer is removed.

    摘要翻译： 提供一种制造半导体器件的方法，其中该方法包括以下步骤：首先在衬底上形成第一导电型金属氧化物半导体晶体管和第二导电型金属氧化物半导体晶体管。 随后，在第一导电型金属氧化物半导体晶体管上依次形成第一应力诱导电介质层和第一覆盖层; 然后在第二导电型金属氧化物半导体晶体管上依次形成第二应力诱导电介质层和第二覆盖层。 接下来，移除第一帽盖层。

    CHEMICAL MECHANICAL POLISHING APPARATUS
    5.
    发明申请
    CHEMICAL MECHANICAL POLISHING APPARATUS 审中-公开
    化学机械抛光装置

    公开(公告)号：US20070232069A1

    公开(公告)日：2007-10-04

    申请号：US11754303

    申请日：2007-05-27

    申请人： Tzu-Yu Tseng ,  Chun-Ting Hu ,  Chu-Yi Hsieh ,  Hung-Chi Pai ,  Yung-Chieh Kuo

    发明人： Tzu-Yu Tseng ,  Chun-Ting Hu ,  Chu-Yi Hsieh ,  Hung-Chi Pai ,  Yung-Chieh Kuo

    IPC分类号： H01L21/02

    CPC分类号： H01L21/7684 ,  H01L21/02074

    摘要： A CMP apparatus therefor is provided. First, a substrate including a semiconductor structure, a liner layer over the semiconductor structure and a metal layer over the liner layer is provided. Next, a metal polishing step is performed to polish the metal layer until a portion of the liner layer is exposed. Next, a buffing step is performed to remove any contaminants from the surface of the metal layer. Thereafter, a liner CMP step is performed to polish the liner layer.

    摘要翻译： 提供了一种CMP设备。 首先，提供包括半导体结构的衬底，半导体结构上的衬垫层和衬层上的金属层。 接下来，执行金属抛光步骤以抛光金属层直到衬里层的一部分露出。 接下来，进行抛光步骤以从金属层的表面去除任何污染物。 此后，进行衬里CMP步骤以抛光衬里层。

    CHEMICAL MECHANICAL POLISHING PROCESS AND APPARATUS THEREFOR
    6.
    发明申请
    CHEMICAL MECHANICAL POLISHING PROCESS AND APPARATUS THEREFOR 审中-公开
    化学机械抛光工艺及其设备

    公开(公告)号：US20070072426A1

    公开(公告)日：2007-03-29

    申请号：US11162856

    申请日：2005-09-26

    申请人： Tzu-Yu Tseng ,  Chun-Ting Hu ,  Chu-Yi Hsieh ,  Hung-Chi Pai ,  Yung-Chieh Kuo

    发明人： Tzu-Yu Tseng ,  Chun-Ting Hu ,  Chu-Yi Hsieh ,  Hung-Chi Pai ,  Yung-Chieh Kuo

    IPC分类号： C03C15/00 ,  H01L21/461 ,  H01L21/306 ,  C23F1/00

    CPC分类号： H01L21/7684 ,  H01L21/02074

    摘要： A CMP process and a CMP apparatus therefor are provided. First, a substrate including a semiconductor structure, a liner layer over the semiconductor structure and a metal layer over the liner layer is provided. Next, a metal polishing step is performed to polish the metal layer until a portion of the liner layer is exposed. Next, a buffing step is performed to remove any contaminants from the surface of the metal layer. Thereafter, a liner CMP step is performed to polish the liner layer.

    摘要翻译： 提供了一种CMP工艺及其CMP设备。 首先，提供包括半导体结构的衬底，半导体结构上的衬垫层和衬底层上的金属层。 接下来，执行金属抛光步骤以抛光金属层直到衬里层的一部分露出。 接下来，进行抛光步骤以从金属层的表面去除任何污染物。 此后，执行衬里CMP步骤以抛光衬里层。