公开(公告)号：US20210344336A1

公开(公告)日：2021-11-04

申请号：US16863830

申请日：2020-04-30

Applicant: Analog Devices, Inc.

Inventor： Javier A. Salcedo ,  Jonathan G. Pfeifer

IPC: H03K17/081 ,  H01L29/74 ,  H01L29/78 ,  H01L27/02

Abstract: Fin field-effect transistor (FinFET) thyristors for protecting high-speed communication interfaces are provided. In certain embodiments herein, high voltage tolerant FinFET thyristors are provided for handling high stress current and high RF power handling capability while providing low capacitance to allow wide bandwidth operation. Thus, the FinFET thyristors can be used to provide electrical overstress protection for ICs fabricated using FinFET technologies, while addressing tight radio frequency design window and robustness. In certain implementations, the FinFET thyristors include a first thyristor, a FinFET triggering circuitry and a second thyristor that serves to provide bidirectional blocking voltage and overstress protection. The FinFET triggering circuitry also enhances turn-on speed of the thyristor and/or reduces total on-state resistance.

公开(公告)号：US11595036B2

公开(公告)日：2023-02-28

申请号：US16863830

申请日：2020-04-30

Applicant: Analog Devices, Inc.

Inventor： Javier A. Salcedo ,  Jonathan G. Pfeifer

IPC: H01L29/74 ,  H01L29/78 ,  H01L27/02 ,  H03K17/081

Abstract: Fin field-effect transistor (FinFET) thyristors for protecting high-speed communication interfaces are provided. In certain embodiments herein, high voltage tolerant FinFET thyristors are provided for handling high stress current and high RF power handling capability while providing low capacitance to allow wide bandwidth operation. Thus, the FinFET thyristors can be used to provide electrical overstress protection for ICs fabricated using FinFET technologies, while addressing tight radio frequency design window and robustness. In certain implementations, the FinFET thyristors include a first thyristor, a FinFET triggering circuitry and a second thyristor that serves to provide bidirectional blocking voltage and overstress protection. The FinFET triggering circuitry also enhances turn-on speed of the thyristor and/or reduces total on-state resistance.

公开(公告)号：US12261593B2

公开(公告)日：2025-03-25

申请号：US18157550

申请日：2023-01-20

Applicant: Analog Devices, Inc.

Inventor： Javier A. Salcedo ,  Jonathan G. Pfeifer

IPC: H03K17/081 ,  H01L27/02 ,  H01L29/74 ,  H01L29/78

Abstract: Fin field-effect transistor (FinFET) thyristors for protecting high-speed communication interfaces are provided. In certain embodiments herein, high voltage tolerant FinFET thyristors are provided for handling high stress current and high RF power handling capability while providing low capacitance to allow wide bandwidth operation. Thus, the FinFET thyristors can be used to provide electrical overstress protection for ICs fabricated using FinFET technologies, while addressing tight radio frequency design window and robustness. In certain implementations, the FinFET thyristors include a first thyristor, a FinFET triggering circuitry and a second thyristor that serves to provide bidirectional blocking voltage and overstress protection. The FinFET triggering circuitry also enhances turn-on speed of the thyristor and/or reduces total on-state resistance.

公开(公告)号：US20230163757A1

公开(公告)日：2023-05-25

申请号：US18157550

申请日：2023-01-20

Applicant: Analog Devices, Inc.

Inventor： Javier A. Salcedo ,  Jonathan G. Pfeifer

IPC: H03K17/081 ,  H01L27/02 ,  H01L29/78 ,  H01L29/74

CPC classification number: H03K17/08108 ,  H01L27/0262 ,  H01L29/785 ,  H01L29/742

Abstract: Fin field-effect transistor (FinFET) thyristors for protecting high-speed communication interfaces are provided. In certain embodiments herein, high voltage tolerant FinFET thyristors are provided for handling high stress current and high RF power handling capability while providing low capacitance to allow wide bandwidth operation. Thus, the FinFET thyristors can be used to provide electrical overstress protection for ICs fabricated using FinFET technologies, while addressing tight radio frequency design window and robustness. In certain implementations, the FinFET thyristors include a first thyristor, a FinFET triggering circuitry and a second thyristor that serves to provide bidirectional blocking voltage and overstress protection. The FinFET triggering circuitry also enhances turn-on speed of the thyristor and/or reduces total on-state resistance.