公开(公告)号：US5641975A

公开(公告)日：1997-06-24

申请号：US555935

申请日：1995-11-09

申请人： Anant K. Agarwal ,  Rowan L. Messham ,  Michael C. Driver

发明人： Anant K. Agarwal ,  Rowan L. Messham ,  Michael C. Driver

IPC分类号： H01L29/20 ,  H01L29/267 ,  H01L29/737 ,  H01L29/26

CPC分类号： H01L29/7371 ,  H01L29/267 ,  H01L29/2003

摘要： A heat tolerant, frequency responsive transistor for use in the microwave region includes a collector region, a base region overlying the collector region, and an emitter region including an AlGaN layer overlying at least part of said base region, forming a heterojunction between said base region and said emitter region. The emitter region may include two layers. The HBT may be mounted on a SiC or sapphire substrate. The HBT may include a buffer layer between the substrate and the collector region.

摘要翻译： 用于微波区域的耐热频率响应晶体管包括集电极区域，覆盖集电极区域的基极区域和包括覆盖在所述基极区域的至少一部分上的AlGaN层的发射极区域，在所述基极区域之间形成异质结 和所述发射极区域。 发射极区域可以包括两层。 HBT可以安装在SiC或蓝宝石衬底上。 HBT可以包括在衬底和收集器区域之间的缓冲层。

公开(公告)号：US5923058A

公开(公告)日：1999-07-13

申请号：US795807

申请日：1997-02-05

申请人： Anant K. Agarwal ,  Rowan L. Messham ,  Michael C. Driver

发明人： Anant K. Agarwal ,  Rowan L. Messham ,  Michael C. Driver

IPC分类号： H01L29/20 ,  H01L29/267 ,  H01L29/737

CPC分类号： H01L29/7371 ,  H01L29/267 ,  H01L29/2003

摘要： A heat tolerant, frequency responsive transistor for use in the microwave region includes a collector region, a base region overlying the collector region, and an emitter region including an AlGaN layer overlying at least part of said base region, forming a heterojunction between said base region and said emitter region. The emitter region may include two layers. The HBT may be mounted on a SiC or sapphire substrate. The HBT may include a buffer layer between the substrate and the collector region.

摘要翻译： 用于微波区域的耐热频率响应晶体管包括集电极区域，覆盖集电极区域的基极区域和包括覆盖在所述基极区域的至少一部分上的AlGaN层的发射极区域，在所述基极区域之间形成异质结 和所述发射极区域。 发射极区域可以包括两层。 HBT可以安装在SiC或蓝宝石衬底上。 HBT可以包括在衬底和收集器区域之间的缓冲层。