Portable apparatus for the non-destructive measurement of the internal quality of vegetable products
    1.
    发明授权
    Portable apparatus for the non-destructive measurement of the internal quality of vegetable products 有权
    便携式仪器,用于无损测量蔬菜产品的内部质量

    公开(公告)号:US07173246B2

    公开(公告)日:2007-02-06

    申请号:US10475106

    申请日:2002-02-22

    IPC分类号: G01J1/06

    摘要: An apparatus for non-destructive measurement of internal properties of individual vegetable or fruit pieces comprises: LEDs constructed and arranged to emit radiation into a vegetable or fruit product; pick-up structure constructed and arranged to pick up radiation, emitted by the LEDs, that has entered the vegetable or fruit product and then exited the vegetable or fruit product; a hollow cylinder between the LEDs and the pick-up structure for preventing radiation emitted by the LEDs from directly reaching the pick-up structure; a spectrometer; structure for conveying to the spectrometer the radiation picked up by the pick-up structure; and structure for processing a spectrum frequency and amplitude data as produced by the spectrometer upon the radiation picked up by the pick-up structure being analyzed by the spectrometer.

    摘要翻译: 用于非破坏性测量单个植物或水果片的内部特性的装置包括:LED构造和布置以将辐射辐射到蔬菜或水果产品中; 拾取结构构造并布置成拾取由LED发出的已经进入蔬菜或水果产品然后退出蔬菜或水果产品的辐射; 在LED和拾取结构之间的中空圆柱体,用于防止由LED发射的辐射直接到达拾取结构; 光谱仪 用于将由拾取结构拾取的辐射传送到光谱仪的结构; 以及用于处理在由光谱仪分析的由拾取结构拾取的放射线上由光谱仪产生的光谱频率和振幅数据的结构。

    Monolithic chemical sensor of the CHEMFET type incorporating an
ion-selective membrane and method of making the same
    2.
    发明授权
    Monolithic chemical sensor of the CHEMFET type incorporating an ion-selective membrane and method of making the same 失效
    包含离子选择膜的化合物类型的单晶化学传感器及其制备方法

    公开(公告)号:US5077229A

    公开(公告)日:1991-12-31

    申请号:US417237

    申请日:1989-10-05

    申请人: Franco Forlani

    发明人: Franco Forlani

    IPC分类号: G01N27/414

    CPC分类号: G01N27/414

    摘要: The sensor comprises a chip of a semiconductor material wherein a field-effect transistor is formed the drain and source regions whereof are provided on a first face of the chip, onto which an ion-selective membrane is applied which is coupled to said field-effect transistor.The membrane covers said first face of the chip completely, and terminals are provided in addition which comprise conductive elements applied to the other face of the chip and being connected to said drain and source regions by connections which extend through the chip.These connections are formed by a method providing for the formation in the chip of buried layers of semiconductor material.