利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

3 条记录 (耗时 0.015 秒)

    Mram-cell and array-architecture with maximum read-out signal and reduced electromagnetic interference
    1.
    发明申请
    Mram-cell and array-architecture with maximum read-out signal and reduced electromagnetic interference 有权
    具有最大读出信号和降低电磁干扰的Mram-cell和阵列架构

    公开(公告)号：US20060056223A1

    公开(公告)日：2006-03-16

    申请号：US10515475

    申请日：2003-05-19

    申请人： Anthonie Ditewig ,  Roger Cuppens

    发明人： Anthonie Ditewig ,  Roger Cuppens

    IPC分类号： G11C11/22

    CPC分类号： G11C11/16 ,  G11C11/15

    摘要： An MRAM memory is proposed which gives a maximum read-out signal. This is advantageous for high-speed sensing of the MRAM bits. In an MRAM memory with magnetoresistive memory cells linked together to form logically organized rows and columns, It is obtained by, at least during writing, connecting write bitlines of two adjacent rows or columns with each other, so as to write inverse data values in two adjacent memory cells. In this way, a return path for the writing current is provided in a small loop, which enhances EMC behavior.

    摘要翻译： 提出了一种提供最大读出信号的MRAM存储器。 这对于MRAM位的高速感测是有利的。 在具有连接在一起形成逻辑组织的行和列的磁阻存储器单元的MRAM存储器中，至少在写入期间通过将两个相邻行或列的写位线彼此连接来获得，以便将二进制数据值写入二 相邻的存储单元。 以这种方式，写入电流的返回路径以小环路提供，这增强了EMC行为。

    Magnetoresistive memory cell array and mram memory comprising such array
    2.
    发明申请
    Magnetoresistive memory cell array and mram memory comprising such array 有权
    磁阻存储单元阵列和包含这种阵列的mram存储器

    公开(公告)号：US20060062067A1

    公开(公告)日：2006-03-23

    申请号：US10515155

    申请日：2003-05-16

    申请人： Anthonie Ditewig ,  Roger Cuppens

    发明人： Anthonie Ditewig ,  Roger Cuppens

    IPC分类号： G11C7/00

    CPC分类号： G11C11/16 ,  G11C8/16

    摘要： The present invention describes a matrix with magnetoresistive memory cells arranged in logically organized rows and columns, Each memory cell includes a magnetoresistive element. The matrix comprises means for simultaneously reading from one cell in a column and writing to another cell in a column, or means for simultaneous reading from one cell in a row and writing to another cell in the same row. Such matrix can be used in a read-while-write MRAM memory.

    摘要翻译： 本发明描述了一种具有按逻辑组织的行和列布置的磁阻存储器单元的矩阵。每个存储单元包括磁阻元件。 矩阵包括用于同时从列中的一个单元读取并写入列中的另一个单元的装置，或用于同时从一行中的一个单元读取并写入同一行中的另一单元的装置。 这样的矩阵可以用在读写MRAM存储器中。

    Current re-routing scheme for serial-programmed mram
    3.
    发明申请
    Current re-routing scheme for serial-programmed mram 有权
    串行编程的当前重路由方案

    公开(公告)号：US20060023489A1

    公开(公告)日：2006-02-02

    申请号：US10536271

    申请日：2003-10-29

    申请人： Anthonie Ditewig ,  Roger Cuppens

    发明人： Anthonie Ditewig ,  Roger Cuppens

    IPC分类号： G11C11/14

    CPC分类号： G11C11/16

    摘要： The present invention provides a method and device for programming a magnetic random access memory element with reduced current consumption, by re-routing digitline current through a selected bitline in a selected direction.

    摘要翻译： 本发明提供一种用于通过在所选方向上重新路由选定位线的数字线电流来编程具有降低的电流消耗的磁随机存取存储器元件的方法和装置。