Vapor transport process for growing selected compound semiconductors of
high purity
    1.
    发明授权
    Vapor transport process for growing selected compound semiconductors of high purity 失效
    用于生长高纯度的选定化合物半导体的蒸气运输过程

    公开(公告)号:US4439266A

    公开(公告)日:1984-03-27

    申请号:US259384

    申请日:1981-05-01

    IPC分类号: C30B23/02 C30B23/06

    摘要: Disclosed herein is a process for growing II-IV semiconductor crystals which includes providing both a II-IV semiconductor source material and a crystal growth support member in a predetermined dynamic vacuum. This vacuum is sufficient to create a predetermined overpressure at the source material and simultaneously remove impurities therefrom. The temperature of the support member is initally raised to a predetermined level above the temperature of the source material to thereby prevent vapor transport between the two. Then, the temperature of the support member is lowered to a predetermined value below that of the source material to produce a disassociation of elemental gases from the source material and initiate controlled vapor transport of the elemental gases from the source material to the support member. In this manner, compound semiconductor crystals of high purity and stoichiometry are formed on the surface of the support member.

    摘要翻译: 本文公开了一种用于生长II-IV半导体晶体的方法,其包括在预定的动态真空中提供II-IV半导体源材料和晶体生长支撑构件。 该真空足以在源材料上产生预定的超压并同时从其中除去杂质。 支撑构件的温度初始升高到高于源材料的温度的预定水平,从而防止两者之间的蒸汽输送。 然后,将支撑构件的温度降低到低于源材料的预定值,以产生元素气体与源材料的分离,并引发元素气体从源材料到支撑构件的受控蒸气输送。 以这种方式,在支撑构件的表面上形成高纯度和化学计量的化合物半导体晶体。

    Vapor transport process for growing selected compound semiconductors of
high purity
    2.
    发明授权
    Vapor transport process for growing selected compound semiconductors of high purity 失效
    用于生长高纯度的选定化合物半导体的蒸气运输过程

    公开(公告)号:US4299649A

    公开(公告)日:1981-11-10

    申请号:US92607

    申请日:1979-11-08

    IPC分类号: C30B23/02 C30B25/02

    摘要: The specification describes a process for growing selected compound semiconductors of high stoichiometry and purity and includes the steps of providing both a dynamic vacuum and a predetermined temperature profile in a container or tube containing a chosen semiconductor source material. The dynamic vacuum is used to create a predetermined minimum overpressure. P.sub.min, in this container with respect to the vapor pressure of the source material, while simultaneously removing impurities through in opening in the container during the crystal growth process. This process involves the vapor transport of elements of the selected compound semiconductor from the source material to a suitable support member, such as a graphite crucible which is maintained at a predetermined uniform controlled temperature. Alternatively, the crystal growth process can be in the form of a vapor phase epitaxial process wherein the selected compound semiconductor is epitaxially deposited on a chosen semiconductor substrate whose temperature is also closely controlled.

    摘要翻译: 本说明书描述了用于生长具有高化学计量和纯度的所选化合物半导体的方法,并且包括在容纳选定的半导体源材料的容器或管中提供动态真空和预定温度分布的步骤。 动态真空用于产生预定的最小超压。 Pmin,相对于源材料的蒸气压在该容器中,同时在晶体生长过程中同时去除容器中的杂质。 该方法涉及将所选择的化合物半导体的元件从源材料蒸汽输送到合适的支撑构件,例如保持在预定的均匀控制温度的石墨坩埚。 或者,晶体生长过程可以是气相外延工艺的形式,其中所选择的化合物半导体外延沉积在温度也受到严格控制的所选择的半导体衬底上。

    Multitote carrier for excavator
    3.
    发明授权
    Multitote carrier for excavator 失效
    挖掘机多承运人

    公开(公告)号:US5367796A

    公开(公告)日:1994-11-29

    申请号:US769369

    申请日:1991-10-01

    摘要: A carrier is described that adapts an excavator with an dozer blade to a tote bucket or scoop. The excavator carrier rests on the blade at its bottom with the blade serving as the back of the carrier. Dumping capability is provided by pivoting the carrier on mounting pins between a mounting bracket added to the back of the blade at its top and a corresponding mounting bracket on the carrier. A backhoe on the excavator can be used to lift the front of the carrier causing the carrier to pivot on the mounting pin and dump material through the separation of the the carrier and the blade at its bottom. Side plates of the carrier extend beyond the back of the blade in a shearing action to maintain self alignment. Quick separation of the carrier from the excavator blade is obtained by simply removing mounting pins on which the carrier pivots and using the backhoe to move the carrier conversion away from the excavator or backing the excavator away from the carrier.

    摘要翻译: 描述了一种载具,用于将具有推土铲的挖掘机适配到手提桶或铲斗。 挖掘机托架在其底部位于叶片上,刀片用作托架的背面。 通过将托架上的安装销枢转在安装支架上,该安装支架在其顶部附加到叶片背面的安装支架与托架上相应的安装支架之间提供倾倒能力。 挖掘机上的反铲可用于提升载体的前部,导致载体在安装销上枢转,并通过托架和叶片在其底部分离而卸载材料。 载体的侧板在剪切作用下延伸超过叶片的后部以保持自对准。 通过简单地移除托架枢轴转动的安装销和使用反铲将运载工具转换离开挖掘机或将挖掘机背离托架,可以快速分离托架与挖掘机叶片。

    Hingeless flapper valve for flow control
    4.
    发明授权
    Hingeless flapper valve for flow control 有权
    无挡板挡板阀用于流量控制

    公开(公告)号:US07448219B2

    公开(公告)日:2008-11-11

    申请号:US10872822

    申请日:2004-06-21

    IPC分类号: F02C6/04

    摘要: A device for controlling fluid flow for heating or cooling an associated system is provided. The present invention includes a housing having a flow control member that includes a bendable portion. The flow control member responds automatically to a pressure condition within the housing and opens or closes based on the direction and quantity of fluid flow and does not include any mechanical or electromechanical control components. The bendable portion may include, for example, a convoluted section. The flow control member is in an open position during a mode of operation of the associated system and is in a closed position in another mode of operation of the system.

    摘要翻译: 提供了一种用于控制用于加热或冷却相关系统的流体流动的装置。 本发明包括具有包括可弯曲部分的流动控制构件的壳体。 流量控制构件自动响应于壳体内的压力状态,并基于流体流动的方向和数量打开或关闭,并且不包括任何机械或机电控制部件。 可弯曲部分可以包括例如卷曲部分。 流量控制构件在相关系统的操作模式期间处于打开位置,并且处于系统的另一操作模式中的关闭位置。