公开(公告)号：US07939850B2

公开(公告)日：2011-05-10

申请号：US12403100

申请日：2009-03-12

申请人： Anton Mauder ,  Giulliano Aloise

发明人： Anton Mauder ,  Giulliano Aloise

IPC分类号： H01L29/74

CPC分类号： H01L29/861 ,  H01L29/0634

摘要： A semiconductor device has a semiconductor body with a semiconductor device structure including at least a first electrode and a second electrode. Between the two electrodes, a drift region is arranged, the drift region including charge compensation zones and drift zones arranged substantially parallel to one another. At least one charge carrier storage region which is at least partially free of charge compensation zones is arranged in the semiconductor body.

摘要翻译： 半导体器件具有半导体器件结构，半导体器件结构至少包括第一电极和第二电极。 在两个电极之间布置漂移区域，漂移区域包括电荷补偿区域和漂移区域彼此基本平行布置。 至少部分没有电荷补偿区域的至少一个电荷载体存储区域被布置在半导体本体中。

公开(公告)号：US09070789B2

公开(公告)日：2015-06-30

申请号：US13048544

申请日：2011-03-15

申请人： Anton Mauder ,  Giulliano Aloise

发明人： Anton Mauder ,  Giulliano Aloise

IPC分类号： H01L21/225 ,  H01L21/20 ,  H01L29/861 ,  H01L29/06

CPC分类号： H01L29/861 ,  H01L29/0634

摘要： A semiconductor device has a semiconductor body with a semiconductor device structure including at least a first electrode and a second electrode. Between the two electrodes, a drift region is arranged, the drift region including charge compensation zones and drift zones arranged substantially parallel to one another. At least one charge carrier storage region which is at least partially free of charge compensation zones is arranged in the semiconductor body.

摘要翻译： 半导体器件具有半导体器件结构，半导体器件结构至少包括第一电极和第二电极。 在两个电极之间布置漂移区域，漂移区域包括电荷补偿区域和漂移区域彼此基本平行布置。 至少部分没有电荷补偿区域的至少一个电荷载体存储区域被布置在半导体本体中。

公开(公告)号：US20110165763A1

公开(公告)日：2011-07-07

申请号：US13048544

申请日：2011-03-15

申请人： Anton Mauder ,  Giulliano Aloise

发明人： Anton Mauder ,  Giulliano Aloise

IPC分类号： H01L21/225 ,  H01L21/20

CPC分类号： H01L29/861 ,  H01L29/0634

摘要： A semiconductor device has a semiconductor body with a semiconductor device structure including at least a first electrode and a second electrode. Between the two electrodes, a drift region is arranged, the drift region including charge compensation zones and drift zones arranged substantially parallel to one another. At least one charge carrier storage region which is at least partially free of charge compensation zones is arranged in the semiconductor body.

摘要翻译： 半导体器件具有半导体器件结构，半导体器件结构至少包括第一电极和第二电极。 在两个电极之间布置漂移区域，漂移区域包括电荷补偿区域和漂移区域彼此基本平行布置。 至少部分没有电荷补偿区域的至少一个电荷载体存储区域被布置在半导体本体中。

公开(公告)号：US20100230715A1

公开(公告)日：2010-09-16

申请号：US12403100

申请日：2009-03-12

申请人： Anton Mauder ,  Giulliano Aloise

发明人： Anton Mauder ,  Giulliano Aloise

IPC分类号： H01L29/739 ,  H01L29/861 ,  H01L29/78 ,  H01L21/20

CPC分类号： H01L29/861 ,  H01L29/0634

摘要： A semiconductor device has a semiconductor body with a semiconductor device structure including at least a first electrode and a second electrode. Between the two electrodes, a drift region is arranged, the drift region including charge compensation zones and drift zones arranged substantially parallel to one another. At least one charge carrier storage region which is at least partially free of charge compensation zones is arranged in the semiconductor body.

摘要翻译： 半导体器件具有半导体器件结构，半导体器件结构至少包括第一电极和第二电极。 在两个电极之间布置漂移区域，漂移区域包括电荷补偿区域和漂移区域彼此基本平行布置。 至少部分没有电荷补偿区域的至少一个电荷载体存储区域被布置在半导体本体中。