Fin Field-Effect Transistor (FinFET) Resonator

    公开(公告)号:US20220311413A1

    公开(公告)日:2022-09-29

    申请号:US17211391

    申请日:2021-03-24

    Applicant: Apple Inc.

    Abstract: An integrated circuit may include a resonator formed from FinFET devices. The resonator may include drive cells of alternating polarities and sense cells interposed between the drive cells. Each of the drive cells may include at least two drive transistors having fins coupled to a drive terminal. Each sense cell may include two sense transistors having one fin coupled to a sense terminal and another fin coupled to ground. Adjacent drive and sense cells may be separated by an intervening region that can accommodate a number of fins. Configured in this way, the resonator can exhibit a high quality factor, low phase noise, and can operate at a frequency that is less than the characteristic resonant frequency as defined by the fin pitch of the drive and sense transistors.

    Fin field-effect transistor (FinFET) resonator

    公开(公告)号:US12057821B2

    公开(公告)日:2024-08-06

    申请号:US17211391

    申请日:2021-03-24

    Applicant: Apple Inc.

    CPC classification number: H03H9/172 H03B5/326 H03H9/205

    Abstract: An integrated circuit may include a resonator formed from FinFET devices. The resonator may include drive cells of alternating polarities and sense cells interposed between the drive cells. Each of the drive cells may include at least two drive transistors having fins coupled to a drive terminal. Each sense cell may include two sense transistors having one fin coupled to a sense terminal and another fin coupled to ground. Adjacent drive and sense cells may be separated by an intervening region that can accommodate a number of fins. Configured in this way, the resonator can exhibit a high quality factor, low phase noise, and can operate at a frequency that is less than the characteristic resonant frequency as defined by the fin pitch of the drive and sense transistors.

    Oscillator with Fin Field-Effect Transistor (FinFET) Resonator

    公开(公告)号:US20220337191A1

    公开(公告)日:2022-10-20

    申请号:US17713338

    申请日:2022-04-05

    Applicant: Apple Inc.

    Abstract: An integrated circuit may include oscillator circuitry having a resonator formed from fin field-effect transistor (FinFET) devices. The resonator may include drive cells of alternating polarities and sense cells interposed between the drive cells. The resonator may be connected in a feedback loop within the oscillator circuitry. The oscillator circuitry may include an amplifier having an input coupled to the sense cells and an output coupled to the drive cells. The oscillator circuitry may also include a separate inductor and capacitor based oscillator, where the resonator serves as a separate output filter stage for the inductor and capacitor based oscillator.

    Oscillator with fin field-effect transistor (FinFET) resonator

    公开(公告)号:US11323070B1

    公开(公告)日:2022-05-03

    申请号:US17233137

    申请日:2021-04-16

    Applicant: Apple Inc.

    Abstract: An integrated circuit may include oscillator circuitry having a resonator formed from fin field-effect transistor (FinFET) devices. The resonator may include drive cells of alternating polarities and sense cells interposed between the drive cells. The resonator may be connected in a feedback loop within the oscillator circuitry. The oscillator circuitry may include an amplifier having an input coupled to the sense cells and an output coupled to the drive cells. The oscillator circuitry may also include a separate inductor and capacitor based oscillator, where the resonator serves as a separate output filter stage for the inductor and capacitor based oscillator.

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