公开(公告)号：US20240429062A1

公开(公告)日：2024-12-26

申请号：US18212314

申请日：2023-06-21

Applicant: Applied Materials, Inc.

Inventor： Alok Ranjan ,  Anatoli Chlenov ,  Kenji Takeshita

IPC: H01L21/311 ,  H01J37/32

Abstract: Exemplary methods of semiconductor processing may include providing a hydrogen-containing precursor and a fluorine-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed on a substrate support within the processing region. One or more layers of silicon-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the hydrogen-containing precursor and the fluorine-containing precursor. The methods may include contacting one or more layers of silicon-containing material with plasma effluents of the hydrogen-containing precursor and the fluorine-containing precursor. The contacting may etch a portion of the one or more layers of silicon-containing material.

公开(公告)号：US20250069895A1

公开(公告)日：2025-02-27

申请号：US18236042

申请日：2023-08-21

Applicant: Applied Materials, Inc.

Inventor： Anatoli Chlenov ,  Kenji Takeshita ,  Alok Ranjan ,  Qian Fu ,  Hikaru Watanabe ,  Akhil Mehrotra ,  Lei Liao ,  Zhonghua Yao ,  Sonam Dorje Sherpa

IPC: H01L21/311 ,  H01J37/32

Abstract: Exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of a silicon-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor. The methods may include contacting the substrate with the plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor. The contacting may etch a feature in the layer of silicon-containing material. A substrate support pedestal temperature may be maintained at less than or about −20° C. during the semiconductor processing method.