公开(公告)号：US20250029849A1

公开(公告)日：2025-01-23

申请号：US18223184

申请日：2023-07-18

Applicant: Applied Materials, Inc.

Inventor： Anish Janakiraman ,  Mayur Govind Kulkarni ,  Deenesh Padhi

IPC: H01L21/67 ,  H01L21/687

Abstract: Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a substrate support within the chamber body. The substrate support may define a substrate support surface. The chambers may include a faceplate supported atop the chamber body. The substrate support and a bottom surface of the faceplate may at least partially define a processing region. The bottom surface of the faceplate may define an annular protrusion that is directly above at least a portion of a radially outer 10% of the substrate support surface and an annular groove that is positioned radially outward of the annular protrusion. At least a portion of the annular groove may extend radially outward beyond the substrate support surface. The faceplate may define apertures through the faceplate. A first subset of the apertures may extend through the annular protrusion and a second subset of the apertures may extend through the annular groove.