公开(公告)号：US20240184207A1

公开(公告)日：2024-06-06

申请号：US18379106

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Zhiyu Huang ,  BOCHENG CAO ,  SIYU ZHU ,  HANG YU ,  YUNG-CHEN LIN ,  CHI-I LANG

IPC: G03F7/11

CPC classification number: G03F7/11

Abstract: Embodiments disclosed herein include a method of developing a patterning stack. In an embodiment, the method comprises providing a patterning stack, where the patterning stack comprises an underlayer and a photoresist over the underlayer, and where the underlayer has a first adhesion strength with the photoresist. The method may further comprise exposing and developing the photoresist with electromagnetic radiation and a developer, where scum remains on a surface of the underlayer. In an embodiment, the method further comprises treating the underlayer so that the underlayer has a second adhesion strength with the scum, and removing the scum.