公开(公告)号：US20240184207A1

公开(公告)日：2024-06-06

申请号：US18379106

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Zhiyu Huang ,  BOCHENG CAO ,  SIYU ZHU ,  HANG YU ,  YUNG-CHEN LIN ,  CHI-I LANG

IPC: G03F7/11

CPC classification number: G03F7/11

Abstract: Embodiments disclosed herein include a method of developing a patterning stack. In an embodiment, the method comprises providing a patterning stack, where the patterning stack comprises an underlayer and a photoresist over the underlayer, and where the underlayer has a first adhesion strength with the photoresist. The method may further comprise exposing and developing the photoresist with electromagnetic radiation and a developer, where scum remains on a surface of the underlayer. In an embodiment, the method further comprises treating the underlayer so that the underlayer has a second adhesion strength with the scum, and removing the scum.

公开(公告)号：US20240272552A1

公开(公告)日：2024-08-15

申请号：US18407776

申请日：2024-01-09

Applicant: Applied Materials, Inc.

Inventor： GABRIELA ALVA ,  ZHENXING HAN ,  MADHUR SACHAN ,  CHI-I LANG ,  LIN ZHOU ,  LEQUN LIU ,  NASRIN KAZEM

IPC: G03F7/039 ,  G03F7/00 ,  G03F7/11 ,  G03F7/20

CPC classification number: G03F7/0392 ,  G03F7/11 ,  G03F7/2026 ,  G03F7/70033

Abstract: Embodiments disclosed herein include a method of patterning a substrate. In an embodiment, the method comprises, disposing a photoresist layer over a substrate, and exposing the photoresist layer to form an exposed region and an unexposed region in the photoresist layer. In an embodiment, the method further comprises treating either the exposed region or the unexposed region with a sequential infiltration synthesis (SIS) process to form a treated region, and developing the photoresist layer to remove portions of the photoresist layer other than the treated region.