公开(公告)号：US20140273749A1

公开(公告)日：2014-09-18

申请号：US14185185

申请日：2014-02-20

申请人： Applied Materials, Inc.

发明人： Jun QIAN ,  Sivakumar DHANDAPANI ,  Benjamin CHERIAN ,  Thomas H. OSTERHELD ,  Charles C. GARRETSON

IPC分类号： B24B37/005

CPC分类号： B24B35/005 ,  B24B37/005

摘要： A method for controlling the residue clearing process of a chemical mechanical polishing (“CMP”) process is provided. Dynamic in-situ profile control (“ISPC”) is used to control polishing before residue clearing starts, and then a new polishing recipe is dynamically calculated for the clearing process. Several different methods are disclosed for calculating the clearing recipe. First, in certain implementations when feedback at T0 or T1 methods are used, a post polishing profile and feedback offsets are generated in ISPC software. Based on the polishing profile and feedback generated from ISPC before the start of the clearing process, a flat post profile after clearing is targeted. The estimated time for the clearing step may be based on the previously processed wafers (for example, a moving average of the previous endpoint times). The calculated pressures may be scaled to a lower (or higher) baseline pressure for a more uniform clearing.

摘要翻译： 提供了一种用于控制化学机械抛光（“CMP”）工艺的残渣清除过程的方法。 动态原位轮廓控制（“ISPC”）用于在清除开始之前控制抛光，然后动态地计算清理过程的新抛光配方。 公开了用于计算清除配方的几种不同的方法。 首先，在使用T0或T1方法的反馈的某些实现中，在ISPC软件中生成后抛光轮廓和反馈偏移。 根据在清算过程开始之前从ISPC产生的抛光轮廓和反馈，目标是清除后的平坦柱状态。 清除步骤的估计时间可以基于先前处理的晶片（例如，先前端点时间的移动平均值）。 计算的压力可以缩放到较低（或更高）的基线压力，以获得更均匀的清除。