公开(公告)号：US20180005842A1

公开(公告)日：2018-01-04

申请号：US15621638

申请日：2017-06-13

申请人： Applied Materials, Inc.

发明人： Eric LAU ,  King Yi HEUNG ,  Charles C. GARRETSON ,  Jun QIAN ,  Thomas H. OSTERHELD ,  Shuchivrat DATAR ,  David CHUI

IPC分类号： H01L21/321 ,  H01L21/304 ,  G01B11/06 ,  H01L21/3105 ,  G01B11/03

CPC分类号： H01L21/3212 ,  G01B11/03 ,  G01B11/06 ,  H01L21/304 ,  H01L21/31053 ,  H01L22/00

摘要： A method for polishing dies locations on a substrate with a polishing module. A thickness at selected locations on the substrate is premeasured at a metrology station, each location corresponding to a location of a single die. The thickness obtained by the metrology station for the selected locations of the substrate is provided to a controller of a polishing module. The thickness corrections for each selected location on the substrate are determined. A polishing step in a polishing recipe is formed from the thickness correction for each selected location. A polishing parameter for each die location is calculated for the recipe.

公开(公告)号：US20240253183A1

公开(公告)日：2024-08-01

申请号：US18401306

申请日：2023-12-29

申请人： Applied Materials, Inc.

发明人： Priscilla Michelle Diep LAROSA ,  Haosheng WU ,  Jimin ZHANG ,  Taketo SEKINE ,  Chen-Wei CHANG ,  Jianshe TANG ,  Brian J. BROWN ,  Wei LU ,  Ekaterina A. MIKHAYLICHENKO ,  Huanbo ZHANG ,  Jeonghoon OH ,  Eric LAU ,  Andrew NAGENGAST ,  Takashi FUJIKAWA ,  Thomas H. OSTERHELD ,  Steven M. ZUNIGA

IPC分类号： B24B57/02 ,  B24B37/015 ,  B24B53/017

CPC分类号： B24B57/02 ,  B24B37/015 ,  B24B53/017

摘要： A method and apparatus for dispensing polishing fluids and onto a polishing pad within a chemical mechanical polishing (CMP) system are disclosed herein. In particular, embodiments herein relate to a CMP system with a first fluid delivery arm and a second fluid delivery arm disposed over the polishing pad to dispense fluid, such as a polishing fluid or water, and/or provide a vacuum pressure. The second fluid delivery arm is configured to dispense a fluid or vacuum pressure onto the polishing pad to effect the polishing rate at the edge of the substrate.

公开(公告)号：US20140273752A1

公开(公告)日：2014-09-18

申请号：US14200149

申请日：2014-03-07

申请人： Applied Materials, Inc.

发明人： Rajeev BAJAJ ,  Rixin PENG ,  Mario CORNEJO ,  Thomas BREZOCZKY ,  Fred REDEKER ,  Thomas H. OSTERHELD

IPC分类号： B24B53/017 ,  B24B37/04

CPC分类号： B24B49/18 ,  B24B37/042 ,  B24B53/017

摘要： A method and apparatus for conditioning a polishing pad used in a substrate polishing process. In one embodiment, a method for conditioning a polishing pad utilized to polish a substrate is provided. The method includes providing relative motion between an optical device and a polishing pad having a polishing medium disposed thereon, and scanning a processing surface of the polishing pad with a laser beam to condition the processing surface, wherein the laser beam has a wavelength that is substantially transparent to the polishing medium, but is reactive with the material of the polishing pad.

摘要翻译： 一种用于调整用于衬底抛光工艺中的抛光垫的方法和装置。 在一个实施例中，提供了一种用于调节用于抛光衬底的抛光垫的方法。 该方法包括提供光学装置与其上布置有抛光介质的抛光垫之间的相对运动，以及用激光束扫描抛光垫的处理表面以调节处理表面，其中激光束具有基本上 对抛光介质透明，但与抛光垫的材料反应。

公开(公告)号：US20140273749A1

公开(公告)日：2014-09-18

申请号：US14185185

申请日：2014-02-20

申请人： Applied Materials, Inc.

发明人： Jun QIAN ,  Sivakumar DHANDAPANI ,  Benjamin CHERIAN ,  Thomas H. OSTERHELD ,  Charles C. GARRETSON

IPC分类号： B24B37/005

CPC分类号： B24B35/005 ,  B24B37/005

摘要： A method for controlling the residue clearing process of a chemical mechanical polishing (“CMP”) process is provided. Dynamic in-situ profile control (“ISPC”) is used to control polishing before residue clearing starts, and then a new polishing recipe is dynamically calculated for the clearing process. Several different methods are disclosed for calculating the clearing recipe. First, in certain implementations when feedback at T0 or T1 methods are used, a post polishing profile and feedback offsets are generated in ISPC software. Based on the polishing profile and feedback generated from ISPC before the start of the clearing process, a flat post profile after clearing is targeted. The estimated time for the clearing step may be based on the previously processed wafers (for example, a moving average of the previous endpoint times). The calculated pressures may be scaled to a lower (or higher) baseline pressure for a more uniform clearing.

摘要翻译： 提供了一种用于控制化学机械抛光（“CMP”）工艺的残渣清除过程的方法。 动态原位轮廓控制（“ISPC”）用于在清除开始之前控制抛光，然后动态地计算清理过程的新抛光配方。 公开了用于计算清除配方的几种不同的方法。 首先，在使用T0或T1方法的反馈的某些实现中，在ISPC软件中生成后抛光轮廓和反馈偏移。 根据在清算过程开始之前从ISPC产生的抛光轮廓和反馈，目标是清除后的平坦柱状态。 清除步骤的估计时间可以基于先前处理的晶片（例如，先前端点时间的移动平均值）。 计算的压力可以缩放到较低（或更高）的基线压力，以获得更均匀的清除。