公开(公告)号：US20240379329A1

公开(公告)日：2024-11-14

申请号：US18144747

申请日：2023-05-08

Applicant: Applied Materials, Inc,

Inventor： Thai Cheng Chua ,  ADAM FISCHBACH ,  CHRISTIAN VALENCIA ,  RICHARD MCKISSICK ,  BRIAN HATCHER

IPC: H01J37/32

Abstract: Embodiments disclosed herein include a remote plasma source. In an embodiment, the remote plasma source comprises a housing where a fluidic channel passes from a first end to a second end of the housing. In an embodiment, an applicator intersects the fluidic channel. In an embodiment, the applicator comprises a dielectric body, and a pin inserted in a hole in the dielectric body.

公开(公告)号：US20230109912A1

公开(公告)日：2023-04-13

申请号：US17903913

申请日：2022-09-06

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng Chua ,  CHRISTIAN VALENCIA ,  DOREEN YONG ,  TUCK FOONG KOH ,  JENN-YUE WANG ,  PHILIP ALLAN KRAUS

IPC: H01L21/311

Abstract: Embodiments disclosed herein include a method of etching a 3D structure. In an embodiment, the method comprises providing the 3D structure in a microwave plasma chamber. In an embodiment, the 3D structure comprises a substrate, and alternating layers of silicon oxide and silicon nitride over the substrate. In an embodiment, the method further comprises flowing a first gas into the microwave plasma chamber, where the first gas comprises sulfur and fluorine. In an embodiment, the method comprises flowing a second gas into the microwave plasma chamber, where the second gas comprises an inert gas. In an embodiment, the method further comprises striking a plasma in the microwave plasma chamber, and etching the silicon nitride, where an etching selectivity of silicon nitride to silicon oxide is 50:1 or greater.