公开(公告)号：US20190371617A1

公开(公告)日：2019-12-05

申请号：US16506520

申请日：2019-07-09

Applicant: Applied Materials, Inc.

Inventor： Chang Wook DOH ,  Zhibin WANG ,  Byungkook KONG ,  Sang Wook KIM ,  Sang-Jun CHOI

IPC: H01L21/3065 ,  H01J37/32

Abstract: Systems and methods discussed herein are directed towards processing of substrates, including forming a plurality of features in a target layer on a substrate. The formation of the plurality of features includes a main etch operation that forms the plurality of features to a first depth in the target layer. The main etch operation is followed by a phase shift sync pulsing (PSSP) operation, and these two operations are repeated iteratively to form the features to a predetermined depth. The PSSP operation includes one or more cycles of RF source power and RF bias power, this cycle deposits a protective coating in and on the features and then etches a portion of the protective coating to expose portions of the feature.