公开(公告)号：US20240412956A1

公开(公告)日：2024-12-12

申请号：US18208762

申请日：2023-06-12

Applicant: Applied Materials, Inc.

Inventor： Costel BILOIU ,  Alan V. HAYES ,  Christopher CAMPBELL ,  Dmitry LUBOMIRSKY

IPC: H01J37/32

Abstract: A method may include receiving a beam profile function, derived from a beam density of an ion beam along a substrate plane, and generating a mirror function, based upon the beam profile function, wherein a sum of the mirror function and beam profile function generates a flat beam distribution. The method may include receiving a grid pattern for an electrode of an electrode assembly, the grid pattern comprising an array of hole locations, and calculating a normalized beam current as a function hole location for the array of hole locations. The method may further include generating an adjusted set of radii as a function of hole location for the array of hole locations based upon the mirror function and the normalized beam current, and generating an electrode assembly having an array of holes, based upon the grid pattern and the adjusted set of radii.