公开(公告)号：US20240032183A1

公开(公告)日：2024-01-25

申请号：US18373128

申请日：2023-09-26

Applicant: Applied Materials, Inc.

Inventor： Costel BILOIU ,  David T. BLAHNIK ,  Wai-Ming TAM ,  Charles T. CARLSON ,  Frank SINCLAIR

IPC: H05H7/02 ,  H05H7/12 ,  H05H9/00

CPC classification number: H05H7/02 ,  H05H7/12 ,  H05H9/00 ,  H05H2007/025

Abstract: An exciter for a high frequency resonator. The exciter may include an exciter coil inner portion, extending along an exciter axis, an exciter coil loop, disposed at a distal end of the exciter coil inner portion. The exciter may also include a drive mechanism, including at least a rotation component to rotate the exciter coil loop around the exciter axis.

公开(公告)号：US20250157833A1

公开(公告)日：2025-05-15

申请号：US18510336

申请日：2023-11-15

Applicant: Applied Materials, Inc.

Inventor： Tyler ROCKWELL ,  Kevin T. RYAN ,  Nicholas Scott CHAMBERLAIN ,  Costel BILOIU

IPC: H01L21/67

Abstract: An ion processing system including a process chamber containing a platen for supporting a semiconductor substrate, the platen mounted on a movable shaft, an ion source connected to the process chamber and adapted to project an ion beam toward the platen, and at least one cooled plate located within the process chamber for collecting byproducts of etching and deposition processes.

公开(公告)号：US20250022697A1

公开(公告)日：2025-01-16

申请号：US18220163

申请日：2023-07-10

Applicant: Applied Materials, Inc.

Inventor： Costel BILOIU ,  David MORRELL ,  Solomon Belangedi BASAME ,  Adam CALKINS ,  Kevin Richard VERRIER

IPC: H01J37/32

Abstract: A plasma processing apparatus. The plasma processing apparatus may include a plasma chamber, to define a plasma therein, and an extraction aperture, arranged along a first side of the plasma chamber, the extraction aperture to define an ion beam extracted therethrough. The plasma processing apparatus may further include a residence time tuning assembly, coupled to a portion of the plasma chamber, different from the first side, wherein the residence time tuning assembly comprises a pumping duct, connected to the plasma chamber on a first end, and defining a pumping path for extracting a gaseous species directly from the plasma chamber, separately from the extraction aperture.

公开(公告)号：US20240412956A1

公开(公告)日：2024-12-12

申请号：US18208762

申请日：2023-06-12

Applicant: Applied Materials, Inc.

Inventor： Costel BILOIU ,  Alan V. HAYES ,  Christopher CAMPBELL ,  Dmitry LUBOMIRSKY

IPC: H01J37/32

Abstract: A method may include receiving a beam profile function, derived from a beam density of an ion beam along a substrate plane, and generating a mirror function, based upon the beam profile function, wherein a sum of the mirror function and beam profile function generates a flat beam distribution. The method may include receiving a grid pattern for an electrode of an electrode assembly, the grid pattern comprising an array of hole locations, and calculating a normalized beam current as a function hole location for the array of hole locations. The method may further include generating an adjusted set of radii as a function of hole location for the array of hole locations based upon the mirror function and the normalized beam current, and generating an electrode assembly having an array of holes, based upon the grid pattern and the adjusted set of radii.