公开(公告)号：US20240379343A1

公开(公告)日：2024-11-14

申请号：US18660774

申请日：2024-05-10

Applicant: Applied Materials, Inc.

Inventor： Yongqian Gao ,  Michael S. Jackson ,  David T. Or ,  Chun-Chieh Wang ,  Le Zhang

IPC: H01L21/02 ,  H01J37/32

Abstract: Embodiments of the disclosure relate to methods for reducing or eliminating the first wafer effect after chamber cleans for plasma etch processes. In some embodiments, the wafer support is maintained at an elevated temperature relative to the etch process. In some embodiments, the etch process is a NF3+NH3 plasma etch to remove native oxides from a silicon substrate.